Data for reference kim-vacuum-56-45

EFFECTS OF PLASMA CONDITIONS ON THE ETCH PROPERTIES OF AlGaN

H. S. Kim , D. H. Lee , J. W. Lee , T. I. Kim , G. Y. Yeom

Vacuum 56, 45 (2000).

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This item cites the following items in the database:

  1. Characteristics of Inductively Coupled Cl2/BCl3 Plasmas during GaN Etching
  2. Etch characteristics of GaN using inductively coupled Cl2/Ar and Cl2/BCl3 plasmas
  3. Etch Characteristics of GaN Using Inductively-Coupled Cl2/HBr and Cl2/Ar Plasmas
  4. The facet formation of GaN-based device using chemically assisted ion beam etching(CAIBE) with photoresist mask
  5. EFFECTS OF INDUCTIVELY COUPLED PLASMA CONDITIONS ON THE ETCH PROPERTIES OF GaN AND OHMIC CONTACT FORMATIONS

Contributed by Hyeon-Soo Kim from webcache15x.cache.pol.co.uk. on Thursday, March 23, 2000 6:37:33 AM

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