Data for reference haffouz-unpublished-1

Influence of the growth mode on the physical properties of GaN grown by MetalOrganic Vapor Phase Epitaxy

S. Haffouz, B. Beaumont, P. Vennéguès, P. Gibart

Semiconductors (1), 0 (2002).

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This item is cited by the following items in the database:

  1. Micro Epitaxial lateral overgrowth of GaN/sapphire by Metal Organic Vapour Phase Epitaxy

Contributed by A submitted manuscript, on Tuesday, November 26, 2002 7:05:28 PM

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