Data for reference darakchieva-unpublished-1Residual strain in HVPE GaN free-standing and re-grown homoepitaxial layers
V. Darakchieva, T. Paskova, P. P. Paskov, B. Monemar, N. Askenov, M. Schubert
unpub. (1), 0 (2002).
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- Photoluminescence in n-doped In0.1Ga0.9N/In0.01Ga0.99N multiple quantum wells
Contributed by A submitted manuscript, on Thursday, August 29, 2002 6:47:36 PM
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