Updated Reference

N-Limited versus Ga-Limited Growth on GaN(0001(bar)) by MBE using NH3

(1), 0 (1998).

GaN(0001(bar)) was grown by MBE on sapphire using a Ga Knudsen cell and an NH3 leak valve, and the growth was investigated by DMS and RHEED. It was shown that DMS and RHEED could be used to observe and control surface termination, Ga coverage, and surface temperature. GaN growth and decomposition rates were obtained by DMS. It was shown that hydrogen is present on the surface during growth on GaN(0001(bar)) and that its desorption rate is proportional to the growth rate. Two distinct growth regimes were identified: Growth under excess NH3 (Ga-limited growth) and growth under excess Ga (NH3-limited growth). Under conditions of excess NH3, damped oscillations in the specular RHEED intensity were observed. The magnitude of these oscillations depended on sample history and was larger at lower temperatures and higher NH3 fluxes. Contrary to previous suggestions, the period of these oscillations does not correspond exactly to integral layer deposition and are not characteristic of a narrow growth front. Further, as the substrate temperature was increased the growth mode changed from island nucleation to step flow with an activation energy of 1.2 eV. When the Ga flux was interrupted, the intensity did not recover without a smoothing step and the growth became 3-D. Under conditions of excess Ga, surfaces were much smoother, but RHEED intensity oscillations were not observed, indicating a step-flow growth mode. In this regime, it was shown that increasing the Ga flux caused the growth rate to decrease. This reduction was explained by a model that states that weakly adsorbed Ga blocks reactive Ga, which are strongly bound. At low temperatures condensation of Ga limited the growth in the excess Ga regime. It was shown that increasing the substrate temperature reduced the coverage of weakly adsorbed Ga and increased the growth rate. At higher temperatures, growth was limited by GaN decomposition.

This item cites the following items in the database:

1. Emerging GaN Based Devices
2. Progress and Prospects for GaN and the III-V Nitride Semiconductors
3. Deposition and Characterization of Diamond, Silicon Carbide and Gallium Nitride Thin Films
4. GaN, AlN, and InN: A review
5. Molecular beam epitaxy of GaN(0001) utilizing NH₃ and/or NH⁺_x ions: Growth kinetics and defect structure MBE of GaN(0001) utilizing NH₃ and/or NH⁺_x ions
6. Gallium Incorporation Kinetics During GSMBE of GaN
7. Structural Characterization of Bulk GaN crystals Grown Under High Hydrostatic Pressure
8. In Situ Control of GaN Growth by Molecular Beam Epitaxy
9. MBE Growth of (In)GaN for LED Applications
10. Growth Rate Reduction of GaN Due to Ga Surface Accumulation
11. The effect of atomic hydrogen on the growth of gallium nitride by molecular beam epitaxy
12. Investigation of GaN deposition on Si, Al₂0₃, and GaAs using in situ mass spectroscopy of recoiled ions and reflection high-energy electron diffraction
13. Surface lifetimes of Ga and growth behavior on GaN(0001)surfaces during molecular beam epitaxy
14. High quality GaN growth at high growth rates by gas-source molecular beam epitaxy
15. In Situ Monitoring of Reflection High Energy Electron Diffraction Oscillation During the Growth of Gallium Nitride Films by Gas Source Molecular Beam Epitaxy
16. Activation energy for the sublimation of gallium nitride
17. Heteroepitaxial wurtzite and zinc-blende structure GaN grown by reactive-ion molecular-beam epitaxy: Growth kinetics, microstructure, and properties
18. Growth kinetics and catalytic effects in the vapor phase epitaxy of gallium nitride
19. In situ monitoring of GaN growth using interference effects
20. Gallium Incorporation Kinetics During GSMBE of GaN
21. Thermodynamic and kinetic processes involved in the growth of epitaxial GaN thin films
22. Reconstructions of the GaN(0001(bar)) Surface
23. Reflection mass spectrometry of As incorporation during GaAs molecular beam epitaxy
24. Vapor Pressure Constants of Elements
25. The influence of inversion domains on surface morphology in GaN grown by molecular beam epitaxy

This item is cited by the following items in the database:

1. Surface Reconstruction during Molecular Beam Epitaxial Growth of GaN (0001)

Contributed by R. Held from pub-23-a-186.dialup.umn.edu. on January 19, 1998 5:17:05 PM
Modified by R. Held from pc22.ece.umn.edu. on February 12, 1998 8:17:31 PM
Modified by R. Held from pc22.ece.umn.edu. on February 24, 1998 9:06:42 PM

last updated Tuesday, December 20, 2005 12:21:56 PM.
© 1998 The Materials Research Society