Data for reference berishev-unpublished-5

High growth rate GaN films using a modified electron cyclotron resonance plasma source

I. Berishev, Esther Kim, A. Bensaoula

J. Vac. Sci. Technol. A 16(5), 0 (1998).

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  1. Time of Flight Mass Spectroscopy of Recoiled Ions Studies of Gallium Nitride Thin Film Deposition by Various Molecular Beam Epitaxial Methods

Contributed by A submitted manuscript, on Tuesday, September 15, 1998 4:05:37 PM

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