Data for reference jones-unpublished-1

Updated Reference

This unpublished reference has now been published. The new reference ID is jones-mrssp-395-141
Data for reference jones-unpublished-1

Gallium Incorporation Kinetics During GSMBE of GaN

C.R. Jones, T. Lei, R. Kaspi, K.R. Evans

Mater. Res. Soc. Symp. Proc. (1), 0 (1996).

Desorption mass spectroscopy is used to examine the growth kinetics of GSMBE grown GaN by monitoring the Ga desorbed from the substrate surface.

This item cites the following items in the database:

  1. GaN, AlN, and InN: A review

This item is cited by the following items in the database:

  1. Growth Rate Reduction of GaN Due to Ga Surface Accumulation
  2. N-Limited versus Ga-Limited Growth on GaN(0001(bar)) by MBE using NH3
  3. N-Limited versus Ga-Limited Growth on GaN(0001(bar)) by MBE using NH3

Contributed by Devin E. Crawford from mac35.ee.umn.edu. on Tuesday, May 28, 1996 4:59:47 PM
Modified by Devin E. Crawford from mac16.ee.umn.edu. on Wednesday, June 19, 1996 5:27:37 PM

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