Data for reference zhang-tsf-237-124

GaN films prepared by ECR plasma-assisted deposition

S. Zhang, D. E. Brodie

Thin Solid Films 237, 124 (1994).

GaN was grown on glass at low temperature by ECR MBE and the photoconductivity was investigated.

This item cites the following items in the database:

  1. High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayers
  2. The preparation and properties of vapor-deposited single-crystal-line GaN
  3. Microstructural and optical characterization of GaN films grown by PECVD on (0001) sapphire substrates
  4. Growth of high-resistivity wurtzite and zincblende structure single crystal GaN by reactive-ion molecular beam epitaxy
  5. Atomic layer epitaxy of GaN over sapphire using switched metalorganic chemical vapor deposition
  6. GaN electroluminescent diodes
  7. GaN, AlN, and InN: A review
  8. Infrared lattice vibrations and free-electron dispersion in GaN

This item is cited by the following items in the database:

  1. Properties of InGaN deposited on Glass at Low Temperature

Contributed by S. Strite from internet-gateway-x.zurich.ibm.com. on Tuesday, February 11, 1997 12:03:59 PM

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