Data for reference strite-tsf-231-197

Progress and Prospects for GaN and the III-V Nitride Semiconductors

S Strite, ME Lin, H Morkoc

Thin Solid Films 231(1-2), 197 (1993).

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This item is cited by the following items in the database:

  1. Theoretical Model for Analysis and Optimization of Group III-Nitrides Growth by Molecular Beam Epitaxy
  2. Inheritance of zinc-blende structure from 3C-SiC/Si(001) substrate in growth of GaN by MOCVD
  3. The Rate of Radiative Recombination in the Nitride Semiconductors and Alloys
  4. In Situ Control of GaN Growth by Molecular Beam Epitaxy
  5. N-Limited versus Ga-Limited Growth on GaN(0001(bar)) by MBE using NH3
  6. N-Limited versus Ga-Limited Growth on GaN(0001(bar)) by MBE using NH3

Contributed by E. Hellman

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