Data for reference amano-tsf-163-415

Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate

H. Amano, I. Akasaki, K. Hiramatsu, N. Koide, N. Sawaki

Thin Solid Films 163, 415 (1988).

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This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review
  2. Growth, Doping and Characterization of AlxGa1-xN Thin Film Alloys on 6H-SiC(0001) Substrates

Contributed by S. Strite
Modified by W.-C. Liao from 140.115.221.100 on Thursday, September 15, 2005 10:39:58 AM

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