1971

• Radiofrequency reactive sputtering for deposition of aluminum nitride thin films

1976

• Aluminum nitride thin films and their properties
• Growth of GaN thin films from active nitrogen and GaCl
• Synthesis of III-V semiconductor nitrides by reactive cathodic sputtering

1979

• The deposition of group III nitrides on silicon substrates

1980

• Mechanisms of reactive sputtering of indium 1: growth of InN in mixed Ar-N₂ discharges
• The growth of highly resistive gallium nitride films

1981

• Electrical properties of sputtered AlN films and interface analyses by Auger electron spectroscopy
• A comparative study of the deposition conditions in the plasma-assisted deposition of gallium nitride thin films
• Dielectric properties of reactively sputtered gallium nitride films

1983

• Transparent conductors - a status review

1984

• Reflection high energy electron diffraction and x-ray studies of AlN films grown on Si(111) and Si(001) by organometallic chemical vapour deposition

1985

• The growth of c-axis oriented GaN films by d.c.-biased reactive growth sputtering

1988

• Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate

1993

• Dopants on Si(100) surface: useful probes of silicon atomic layer epitaxy?
• Layer-By-Layer Epitaxial Growth of GaN at Low Temperatures
• Progress and Prospects for GaN and the III-V Nitride Semiconductors

1994

• GaN films prepared by ECR plasma-assisted deposition
• Optical properties of sputter-deposited aluminum nitride films on silicon

1997

• Surface deformation of the InGaN thin films deposited on a sapphire substrate
• c-Boron-aluminum nitride alloys prepared by ion-beam assisted deposition
• High quality optoelectronic grade epitaxial AlN films on alpha-Al₂O₃, Si and 6H-SiC by pulsed laser deposition

1998

• Generalized ellipsometry and complex optical systems
• Spectroscopic data analysis: measured versus calculated quantities
• Determination of optical anisotropy in Calcite from ultraviolet to mid-infrared by generalized ellipsometry
• RHEED study of Nb thin film growth on (0001)Al₂0₃ substrate.

1999

• A study of GaN etch mechanism using the inductively coupled Cl2/Ar plasmas

2000

• An investigation into the early stages of oxide growth on gallium nitride

last updated Thursday, February 14, 2002 1:59:35 PM.
© 2001 The Materials Research Society