1974

• Surface Stoichiometry and Structure of GaAs

1985

• An AES investigation of aluminum, Al oxide and Al nitride thin films
• The (7x7)–(1x1) Phase Transition on Si(111)

1989

• Surface structure and composition of beta- and 6H-SiC

1991

• Nitride layers on GaAs(110) surfaces

1992

• Hetero-Epitaxial Growth of Cubic GaN on GaAs by Gas-Source Molecular Beam Epitaxy

1994

• Metal Ceramic Adhesion: Band Structure Calculations on Transition Metal AlN Interfaces

1995

• Correlation between barrier height and interface structure ofAg/Si(111) Schottky diodes
• Lead Contacts on Si(111):H-1x1 surfaces
• Analysis of V-group molecules sticking to III-V compound surfaces

2000

• Surface kinetics of GaN evaporation and growth by molecular-beam epitaxy

last updated Thursday, February 14, 2002 1:59:14 PM.
© 2001 The Materials Research Society