yoshida-surfsci-267-50

Data for reference yoshida-surfsci-267-50

Hetero-Epitaxial Growth of Cubic GaN on GaAs by Gas-Source Molecular Beam Epitaxy

S Yoshida, H Okumura, S Misawa, E Sakuma

Surface Science 267, 50 (1992).

GaAs and GaN were epiltaxially grown on GaAs substrates by gas-source MBE using diethylarsine (DEAsH) and dimethylhydrazine (DMHy) as As and N sources, respectively. Cubic GaN was found to grow on nitrided GaAs(001) surfaces, in contrast with the growth of hexagonal GaN on GaAs(111) surfaces. Cathodeluminescence spectra suggest that cubic GaN has about a 0.4eV larger band gap energy than that of the hexagonal one. It was also found that GaAs grows preferentially to GaN when DEAs and DMHy beams are supplied simultaneously with a Ga beam onto the substrates. Thus, only by intermittent supply of a DEAs beam, GaN/GaAs multilayers were obtained.

Contributed by Hajime Okumura from wall.etl.go.jp. on Friday, May 17, 1996 8:19:11 AM

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