nakamura-sst-14-r27

Data for reference nakamura-sst-14-r27

InGaN-based violet laser diodes

S Nakamura

Semiconductor Science and Technology 14(6), R27 (1999).

Topical review. UV, blue, green, amber and amber LEDs were obtained using GaInN as active layer. GaInN MQW GaN/GaN/AlGaN SCH laser diodes were fabricated on ELO GaN substrates. The lifetime of these LDs at an output power of 5 mW was estimated to be about 3000 hours under cw operation at 50°C.

Contributed by Pierre GIBART from isolde.crhea.cnrs.fr. on Wednesday, September 29, 1999 9:48:04 AM

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