Data for reference dewsnip-sst-13-500

Photoluminescence of MBE grown wurtzite Be-doped GaN

D. J. Dewsnip, A. V. Andrianov, I. Harrison, J. W. Orton, D. E. Lacklison, G. B. Ren, S. E. Hooper, T. S. Cheng, C. T. Foxon

Semiconductor Science and Technology 13, 500 (1998).

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This item is cited by the following items in the database:

  1. Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111).

Contributed by A submitted manuscript, on Monday, July 6, 1998 11:23:18 PM

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