kribes-sst-12-913

Data for reference kribes-sst-12-913

Investigation of Au Schottky contacts on GaN grown by molecular beam epitaxy

Y Kribes, I Harrison, B Tuck, T S Cheng, C T Foxon

Semiconductor Science and Technology 12(7), 913 (1997).

Gold Schottky diodes have been fabricated on n- GaN grown by MBE. These diodes have been studied by I-V, C-V and DLTS. The barrier height was found to be 1.1 eV.

Contributed by Pierre Gibart from isolde.unice.fr. on July 31, 1997 10:12:29 AM

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