basak-sst-12-1654

Data for reference basak-sst-12-1654

Reactive ion etching of GaN layers using SF6

D Basak, M Verdu, M T Montogo, M A Sanchez-Garcia, J F Sanchez, E Munoz, E Calleja

Semiconductor Science and Technology 12(12), 1654 (1997).

The characteristics of Reactive ion etching of GaN using SF6 are reported. The etch rate increases with increasing self-bias voltages and SF6 flow rates.

Contributed by Pierre Gibart from isolde.crhea.cnrs.fr. on February 6, 1998 8:54:21 AM

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.