kribes-sst-12-1500

Data for reference kribes-sst-12-1500

Investigation of aluminium ohmic contacts to n-type GaN grown by molecular beam epitaxy

Y Kribes, I Harrison, B Tuck, K S Kim, T S Cheng, C T Foxon

Semiconductor Science and Technology 12(11), 1500 (1997).

Al contacts on n-type GaN grown by plasma source MBE were investigated. The GaN surface needs to be etched before the deposition of the metal. Annealing the contacts at 600°C produces contact with specific resistance of 2e-4ohm.cm-2.

Contributed by Pierre Gibart from isolde.unice.fr. on December 15, 1997 9:16:45 AM

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