Data for reference calle-sst-12-1396

Exciton and donor-acceptor recombination in undoped GaN on Si(111)

F Calle, F J Sanchez, J M G Tijero, M A Sanchez-Garcia, E Calleja, R Berenford

Semiconductor Science and Technology 12(11), 1396 (1997).

GaN grown on Si(111) by MBE under nitrogen rich conditions has been studied by PL. Intense excitonic emissions as narrow as 1.7 meV are observed at LT. The free A, B and C excitons are observed at 3.4786, 3.484 and 3.503 eV respectively. The crystal field and spin orbit splitting can be decuded, 9.9 meV and 19.9 meV respectively. Four extrinsic transitions at 3.4755, 3.4714, 3.456 and 3.450 eV have also been observed and assigned to bound excitons and donor-to-acceptor transitions. Also a band at 3.41-3.42 eV is attributed to a donor-to-acceptor transition.

This item is cited by the following items in the database:

  1. Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111).
  2. Crystal Morphology and Optical Emissions of GaN layers grown on Si(111) substrates by Molecular Beam Epitaxy

Contributed by Pierre Gibart from isolde.unice.fr. on December 15, 1997 3:21:32 AM

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Wednesday, April 27, 2005 7:51:08 PM.
© 1998 The Materials Research Society