Data for reference ping-sst-12-133

Dry Etching of AlxGa1-xN using Chemically Assisted Ion Beam Etching

A.T. Ping, M. Asif Khan, I. Adesida

Semiconductor Science and Technology 12, 133 (1997).

Etch rate was studied as a function of the Al composition in AlxGa1-xN (for x = 0 to 1) and as a function of ion beam energy. Anisotropic etched stuctures in Al0.4Ga0.6N were also demonstrated.

Contributed by A. T. Ping from escobar.ccsm.uiuc.edu. on Friday, February 7, 1997 1:05:46 AM

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