Data for reference podor-sst-11-827

Acceptor ionisation energiesin gallium nitride: chemical trends and electronegativities

B Podor

Semiconductor Science and Technology 11, 827 (1996).

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This item is cited by the following items in the database:

  1. Evidence for Shallow Acceptor Levels in MBE Grown GaN
  2. Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111).

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