Data for reference merz-sst-11-712

Free and bound excitons in thin wurtzite GaN layers on sapphire

C. Merz, M. Kunzer, U. Kaufmann

Semiconductor Science and Technology 11, 712 (1996).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item is cited by the following items in the database:

  1. Evidence for Shallow Acceptor Levels in MBE Grown GaN
  2. RADIATIVE LIFETIME OF EXCITONS IN GaInN/GaN QUANTUM WELLS
  3. Blue and green electroluminescence from MBE grown GaN/InGaN heterostructures
  4. Thermodynamic analysis of molecular beam epitaxy of III-V compounds: Application to the GayIn1-yAs multilayer epitaxy
  5. Nonuniform Morphology and Luminescence Properties of a Molecular Beam Epitaxy GaN Film from Atomic Force Microscopy, Scanning Electron Microscopy and Cathodoluminescence

Contributed by Andreas Hangleiter from pi4wap0.physik.uni-stuttgart.de. on Thursday, September 19, 1996 3:05:01 AM

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Friday, April 29, 2005 6:20:31 PM.
© 1998 The Materials Research Society