Data for reference andrianov-sst-11-366

Low-temperature luminescence study of GaN films grown by MBE

A V Andrianov, D E Lacklison, J W Orton, D J Dewsnip, S E Hooper, C T Foxon

Semiconductor Science and Technology 11, 366 (1996).

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This item is cited by the following items in the database:

  1. Evidence for Shallow Acceptor Levels in MBE Grown GaN

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