Data for reference schmitz-sst-11-1464

Schottky barrier properties of various metals on n-type GaN

A.C. Schmitz, A.T. Ping, M.Asif Khan, Q. Chen, J.W. Yang, I. Adesida

Semiconductor Science and Technology 11(10), 1464 (1996).

Schottky barrier properties of Ti, Cr, Au, Pd, Ni, and Pt to n-type GaN were investigated.

This item cites the following items in the database:

  1. High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayers
  2. Schottky barrier photodetector based on Mg-doped p-type GaN films
  3. Metal semiconductor field effect transistor based on single crystal GaN
  4. High electron mobility transistor based on a GaN-AlxGa1-xN heterojunction
  5. High-Temperature GaN/SiC Heterojunction Bipolar Transistor with High Gain
  6. Low resistance ohmic contacts on wide band-gap GaN
  7. Schottky barrier on n-type GaN grown by hydride vapor phase epitaxy
  8. Metal contacts to gallium nitride
  9. Photoemission from GaN

Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Friday, December 13, 1996 12:43:52 PM
Modified by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on Thursday, January 23, 1997 3:19:56 PM
Modified by A. T. Ping from barnegat.ccsm.uiuc.edu. on Sunday, February 2, 1997 4:32:27 PM

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Monday, May 2, 2005 6:43:35 PM.
© 1998 The Materials Research Society