Data for reference orton-sst-10-101

Acceptor binding energy in GaN and related alloys

J W Orton

Semiconductor Science and Technology 10, 101 (1995).

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This item is cited by the following items in the database:

  1. Evidence for Shallow Acceptor Levels in MBE Grown GaN
  2. Luminescence and Reflectivity of GaN/sapphire grown by MOVPE, GSMBE and HVPE.
  3. Luminescence of Be-doped GaN layers grown by molecular beam epitaxy on Si (111).
  4. Crystal Morphology and Optical Emissions of GaN layers grown on Si(111) substrates by Molecular Beam Epitaxy

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