Data for reference pearton-sst-8-310

Dry Etching of Thin Film InN, AiN and GaN

SJ Pearton, CR Abernathy, F Ren, et al.

Semiconductor Science and Technology 8(2), 310 (1993).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item is cited by the following items in the database:

  1. Dry patterning of InGaN and InAlN
  2. ECR RIE-Enhanced Low Pressure Plasma Etching of GaN/InGaN/AlGaN Heterostructures
  3. Electron cyclotron resonance etching of III–V nitrides in IBr/Ar plasmas

Contributed by E. Hellman

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Monday, May 2, 2005 1:39:03 PM.
© 1998 The Materials Research Society