Data for reference asahi-sspaj-2-68

Gas Source MBE growth of GaN and GaNP using ion-removed ECR radical cell

H Asahi, K Iwata, K Asami, S Gonda

Solid State Physics and Application Journal 2(2), 68 (1996).

IN JAPANESE, authors with Institute of Science and Industrial Research, Osaka University. Published by Japan Society of Applied Physics Division

Contributed by Robert J Feuerstein from daviste.yokota.af.mil. on Tuesday, October 15, 1996 12:52:44 AM

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