1967

• Epitaxial growth of aluminum nitride

1968

• Effects of Deep Impurities on n+p Junction Reverse-biased Small-Signal Capacitance

1976

• Hot electron microwave conductivity of wide band gap semiconductors

1974

• Mechanism of light production in MIS GaN:Mg violet light-emitting diodes

1987

• Crystal structure and band gap of AlGaAsN

1980

• Specific contact resistance using a circular transmission line model

1990

• Surface passivation of GaAs by aluminum nitride films

1995

• Implantation and redistribution of dopants and isolation species in GaN and related compounds

1997

• MOVPE growth of thick homogeneous InGaN directly on sapphire substrate using AlN buffer layer
• Optical and magnetic resonance characterization of undoped and doped Wurtzite GaN films deposited on sapphire substrates,
• Dynamical study of the yellow luminescence band in GaN
• MBE Growth and Properties of GaN on GaN/SiC Substrates
• Influence of the V/III Molar ratio on the structural and electronic properties of MOVPE grown GaN
• Optical characterisation of GaN and related materials

1998

• Properties of Si Donors and Persistent Photoconductivity in AlGaN
• Scanning Electron Microscope Studies of AlGaN Films Grown by Organometallic Vapor Phase Epitaxy
• Deep Traps in High Resistivity AlGaN Films

1997

• GaNAs grown by gas source molecular beam epitaxy

1998

• megawatt solid state electronics
• a review of JFETs for high temperature and high power electronics
• 4H-SiC power devices for use in power electronic motor control

1997

• Low pressure metalorganic vapor phase epitaxial growth of GaN/InGaN heterostructures

1998

• A review of the metal-GaN contact technology

last updated Thursday, February 14, 2002 1:58:20 PM.
© 2001 The Materials Research Society