Data for reference mnatsakanov-solstelectr-47-111

Carrier mobility model for GaN

T. T. Mnatsakanov, M. E. Levinshtein, L. I. Pomortseva, S. N. Yurkov, G. S. Simin, M. A. Khan

Solid State Electronics 47(1), 111 (2003).

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This item is cited by the following items in the database:

  1. The Ambient Temperature Effect on Current-Voltage Characteristics of Surface-Passivated GaN-Based Field-Effect Transistors

Contributed by A submitted manuscript, on Monday, November 15, 2004 11:50:11 AM

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