Data for reference briot-solstelectr-41-315

Influence of the V/III Molar ratio on the structural and electronic properties of MOVPE grown GaN

O. Briot, J. P. Alexis, S. Sanchez, B. Gil, R. L. Aulombard

Solid State Electronics 41(2), 315 (1997).

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This item is cited by the following items in the database:

  1. Growth of Semi-insulating GaN Layer by Controlling Size of Nucleation Sites for SAW Device Applications

Contributed by A submitted manuscript, on Friday, July 24, 1998 10:54:39 AM

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