Data for reference johnson-solstelectr-41-213

MBE Growth and Properties of GaN on GaN/SiC Substrates

M. A. L. Johnson, S. Fujita, W. H. Rowland, et al

Solid State Electronics 41(2), 213 (1997).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item is cited by the following items in the database:

  1. Epitaxial Growth and Orientation of GaN on (1 0 0) γ-LiAlO2
  2. The Polarity of GaN: a Critical Review

Contributed by A submitted manuscript, on Friday, June 20, 1997 10:01:01 PM

If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.

MRS Internet Journal of Nitride Semiconductor Research

last updated Thursday, April 28, 2005 6:16:15 PM.
© 1998 The Materials Research Society