Data for reference shimizu-solstelectr-41-145

MOVPE growth of thick homogeneous InGaN directly on sapphire substrate using AlN buffer layer

M. Shimizu, Y. Kawaguchi, K. Hiramatsu, N. Sawaki

Solid State Electronics 41(2), 145 (1997).

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This item is cited by the following items in the database:

  1. The Composition Pulling Effect in MOVPE Grown InGaN on GaN and AlGaN and its TEM Characterization

Contributed by A submitted manuscript, on Monday, May 12, 1997 4:37:28 PM

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