Data for reference scholz-solstelectr-41-141

Low pressure metalorganic vapor phase epitaxial growth of GaN/InGaN heterostructures

F. Scholz, V. Härle, H. Bolay, F. Steuber, B. Kaufmann, G. Reyher, A. Dörnen, O. Gfrörer, S. -J. Im, A. Hangleiter

Solid State Electronics 41, 141 (1997).

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This item is cited by the following items in the database:

  1. Optical phonons and free-carrier effects in MOVPE grown AlxGa1-xN measured by Infrared Ellipsometry

Contributed by A submitted manuscript, on Wednesday, September 29, 1999 1:56:14 PM

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