Data for reference wilson-solstelectr-38-1329

Implantation and redistribution of dopants and isolation species in GaN and related compounds

R. G. Wilson, C. B. Vartuli, C. R. Abernathy, S. J. Pearton, J. M. Zavada

Solid State Electronics 38(7), 1329 (1995).

Implantation of twelve different elements into InN, GaN and AlN is investigated and profiles compared with simulations. Redistribution at temperatures up to 800 C was also investigated.

This item is cited by the following items in the database:

  1. High Resistivity AlxGa1-xN Layers Grown by MOCVD
  2. Improved optical activation of ion-implanted Zn acceptors in GaN by annealing under N2 overpressure
  3. Efficient optical activation of ion-implanted Zn acceptors in GaN by annealing under 10 kbar N2 overpressure

Contributed by Toby Strite from internet-gw.zurich.ibm.ch. on Wednesday, November 22, 1995 6:40:27 AM

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