Data for reference das-solstelectr-19-851

Hot electron microwave conductivity of wide band gap semiconductors

P. Das, D. K. Ferry

Solid State Electronics 19, 851 (1976).

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This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review
  2. Growth of zinc blende-GaN on beta -SiC coated (001) Si by molecular beam epitaxy using a radio frequency plasma discharge, nitrogen free-radical source

Contributed by S. Strite

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