Data for reference cheng-solstcomm-109-439

Mechanisms of magnesium incorporation into GaN layers grown by molecular beam epitaxy

T. S. Cheng, S. V. Novikov, C. T. Foxon, J. W. Orton

Solid State Communications 109, 439 (1999).

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This item is cited by the following items in the database:

  1. Modeling GaN Growth by Plasma Assisted MBE in the Presence of Low Mg Flux

Contributed by A submitted manuscript, on Thursday, August 16, 2001 2:47:35 PM

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