Data for reference gorczyca-solstcomm-101-747

Calculated Defect Levels in GaN and AlN and their Pressure Coefficients

I. Gorczyca, A. Svane, N. E. Christensen

Solid State Communications 101(10), 747 (1997).

Vacancies, antisites and interstitials and some of the most common dopants such as Zn, Mg, Cd, C, and Ge are investigates. The influence of hydrostatic pressure on the energy positions is also studied. The self-consistent calculations are performed using the Green's function technique based on the linear muffin-tin orbital method.

This item is cited by the following items in the database:

  1. Native defects and carbon impurity in cubic BN
  2. Review of polarity determination and control of GaN

Contributed by J. A. Majewski from lax.wsi.tu-muenchen.de. on Tuesday, March 4, 1997 10:58:07 AM

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