Data for reference pakula-solstcomm-97-919

Luminescence and Reflectivity in the Exciton Region of Homoepitaxial GaN layers Grown on GaN Substrates

K Pakula, A Wysmolek, KP Korona, JM Baranowski, R Stepniewski, I Grzegory, M Bockowski, J Jun, S Krukowski, M Wroblewski, S Porowski

Solid State Communications 97(11), 919 (1996).

In summary, GaN (0001) homoepitaxial layers have been grown via the MOCVD process on single crystal GaN substrates. The low temperature photoluminescence spectrum shows intense emission in the exciton region with narrow lines of a FWHM of 1meV. These indicate that the homoepitaxial layers of GaN have a good structural and optical properties.

This item is cited by the following items in the database:

  1. Free Excitons in GaN
  2. Electronic structure of biaxially strained wurtzite crystals GaN, AlN, and InN
  3. Photoluminescence study on GaN homoepitaxial layers grown by molecular beam epitaxy
  4. Recent Results in the Crystal Growth of GaN at High N2 Pressure
  5. Electronic band structures and effective-mass parameters of wurtzite GaN and InN
  6. Crystal Morphology and Optical Emissions of GaN layers grown on Si(111) substrates by Molecular Beam Epitaxy

Contributed by Andrzej Wysmolek from jez.fuw.edu.pl. on Tuesday, April 2, 1996 8:36:16 AM
Modified by Jacek A. Majewski from esaki.wsi.physik.tu-muenchen.de. on Friday, May 31, 1996 12:05:40 PM

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