Data for reference ambacher-solstcomm-97-365

Sub-Bandgap Absorption of Gallium Nitride Determined by Photothermal Deflection Spectroscopy

O Ambacher, W Rieger, P Ansmann, H Angerer, TD Moustakas, M Stutzmann

Solid State Communications 97(5), 365 (1996).

Photothermal Deflection Spectroscpopy on GaN. Changes in the sub-bandgap after thermal treatment are presented.

This item is cited by the following items in the database:

  1. PEMBE-Growth of Gallium Nitride on (0001) Sapphire: A comparison to MOCVD grown GaN
  2. GaInN/GaN-Heterostructures and Quantum Wells Grown by Metalorganic Vapor-Phase Epitaxy
  3. AlGaN-Based Bragg Reflectors

Contributed by Helmut Angerer from sunsrv8.lrz-muenchen.de. on Tuesday, June 18, 1996 11:30:58 AM

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