Data for reference meyer-solstcomm-95-597

Shallow donors in GaN - the binding energy and the electron effective mass

B. K. Meyer, D. Volm, A. Graber, H. C. Alt, T. Detchprohm, A. Amano, I. Akasaki

Solid State Communications 95, 597 (1995).

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This item is cited by the following items in the database:

  1. Identification of a Cubic Phase in Epitaxial Layers of Predominantly Hexagonal GaN
  2. Magneto-optical studies of shallow donors in MOCVD grown GaN layers in FIR
  3. Crystal Morphology and Optical Emissions of GaN layers grown on Si(111) substrates by Molecular Beam Epitaxy
  4. On the Bandstructure in GaInN/GaN Heterostructures - Strain, Band Gap and Piezoelectric Effect
  5. Photoluminescence, Magnetospectroscopy, and Resonant Electronic Raman Studies of Heteroepitaxial Gallium Nitride

Contributed by A submitted manuscript, on Monday, December 23, 1996 12:28:36 PM

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