Data for reference khan-solstcomm-57-405

Effect of Si on the photoluminescence of GaN

M.R.H. Khan, Y. Ohshita, N. Sawaki, I. Akasaki

Solid State Communications 57, 405 (1986).

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This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review
  2. Recent progress of crystal growth, conductivity control and light emitters of column-III nitrides, and future prospect of nitride-based laser diode.

Contributed by S. Strite

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