Data for reference weisbuch-solstcomm-38-709

Optical characterization of interface disorder inGaAs-Ga1-xAlxAs multi-quantum well structures,

C. Weisbuch, R. Dingle, A. C. Gossard, W. Wiegmann

Solid State Communications 38, 709 (1981).

The Materials Research Society does not yet have permission from the copyright owner to make the abstract available.

This item is cited by the following items in the database:

  1. Radiative recombination in In0.15Ga0.85N/GaN multiple quantum well structures

Contributed by A submitted manuscript, on Monday, November 8, 1999 9:25:34 PM


If you are a registered user, and would like to help the journal improve its references database, you can help by adding data to the database. The author list may be incomplete; the abstract or title may be missing, and the list of references cited by the article is probably absent or incomplete.


MRS Internet Journal of Nitride Semiconductor Research

last updated Tuesday, May 3, 2005 5:15:16 PM.
© 1998 The Materials Research Society