Data for reference dingle-solstcomm-9-175

Donor-acceptor pair recombination in GaN

R. Dingle, M. Ilegems

Solid State Communications 9, 175 (1971).

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This item is cited by the following items in the database:

  1. GaN, AlN, and InN: A review
  2. Growth, Doping and Characterization of AlxGa1-xN Thin Film Alloys on 6H-SiC(0001) Substrates
  3. Microstructure, growth mechanisms and electro-optical properties of heteroepitaxial GaN layers on sapphire (0001) substrates
  4. Identification of a Cubic Phase in Epitaxial Layers of Predominantly Hexagonal GaN
  5. Crystalline Structure changes in GaN Films Grown at Different Temperatures
  6. Uniaxial Strain Effect on the Electronic and Optical Properties of Wurtzite GaN/AlGaN Quantum Well Lasers

Contributed by S. Strite

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