Data for reference zubrilov-semiconductors-31-523

Luminescent properties of gallium nitride layers grown by vapor-phase epitaxy in a chloride system on silicon carbide substrates

AS Zubrilov, YuV Melnik, DV Tsvetkov, VE Bougrov, AE Nikolaev, SI Stepanov, VA Dmitriev

Semiconductors 31(5), 523 (1997).

Luminescent properties of undoped GaN layers grown by HVPE on SiC were studied. Edge (361 nm) and defect (380 nm, 430 nm, 560 nm) luminescence bands have been detected in PL and CL spectra.

This item cites the following items in the database:

  1. High-power InGaN/GaN double-heterostructure violet light emitting diodes
  2. Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
  3. High-Brightness InGaN Blue,Green and Yellow Light-Emitting Diodes with Quantum Well Structures
  4. GaN, AlN, and InN: A review
  5. High-quality GaN grown directly on SiC by halide vapour phase epitaxy.
  6. GaN Layers Grown by HVPE on P-type 6H-SiC Substrates

Contributed by A.E. Nikolaev from www-proxy.ioffe.rssi.ru. on September 2, 1997 6:17:39 AM

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