Data for reference kudryashov-semiconductors-31-1123

Tunneling effects in light-emitting diodes based on InGaN/AlGaN/GaN heterostructures with quantum wells

V. E. Kudryashov, K. G. Zolina, A. N. Turkin, A. E. Yunovich, A. N. Kovalev, F. I. Manyakhin

Semiconductors 31(11), 1123 (1997).

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This item is cited by the following items in the database:

  1. The Emission Properties of Light Emitting Diodes using InGaN/AlGaN/GaN Multiple Quantum Wells
  2. Aging Mechanisms of InGaN/AlGaN/GaN Light-Emitting Diodes Operating at High Currents

Contributed by A submitted manuscript, on Friday, October 23, 1998 10:00:25 PM

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