Data for reference ber-semiconductors-30-293

Implantation of As in GaN epitaxial layers during molecular-beam epitaxy

B. Ya. Ber, A. V. Merkulov, S. V. Novikov, V. V. Tret'yakov , T. S. Cheng, C. T. Foxon, L. C. Jenkins, S. E. Hooper , D. E. Lacklison, J. W. Orton

Semiconductors 30(3), 293 (1996).

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