Data for reference kisielowski-semi2-57-306

Strain in GaN thin films and heterostructures

C. Kisielowski

Semiconductors and Semimetals 57, 306 (1999).

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This item is cited by the following items in the database:

  1. The effects of indium concentration and well-thickness on the mechanisms of radiative recombination in InxGa1-xN quantum wells

Contributed by A submitted manuscript, on Monday, January 31, 2000 11:26:07 PM

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