References with substrate in the title or abstract

• Effects of an AlN buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga _1-xAl _xN (0 < x ≤ 0.4) films grown on sapphire substrates by MOVPE
• Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate
• Heteroepitaxial growth and the effects of strain on the luminescent properties of GaN films on (11&twobar;0) and (0001) sapphire substrates
• Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
• The deposition of group III nitrides on silicon substrates
• The growth, crystallographic and electrical assessment of epitaxial layers of aluminum nitride on corundum substrates
• Properties of GaN grown on sapphire substrates
• Steady-state thermal conductivity measurements of AlN and SiC substrate materials
• Structure control of GaN films grown on (001) GaAs substrates by GaAs surface pretreatments
• Growth of GaN films using trimethylgallium and hydrazine
• MOVPE growth of GaN on a misoriented sapphire substrate
• Microstructural and optical characterization of GaN films grown by PECVD on (0001) sapphire substrates
• Heteroepitaxial growth of GaN _1-xP _x (x≤0.06) on sapphire substrates
• Epitaxial growth of GaN _1-xP _x (x ≤ 0.04) on sapphire substrates
• Growth of high optical and electrical quality GaN layers using low-pressure metalorganic chemical vapor deposition
• Vertical-cavity, room-temperature stimulated emission from photopumped GaN films deposited over sapphire substrates using low- pressure metalorganic chemical vapor deposition
• Atomic layer epitaxy of GaN over sapphire using switched metalorganic chemical vapor deposition
• Substrate and temperature dependent morphology of rf-sputtered indium nitride films
• Preparation and properties of III-V nitride thin films
• Vapor phase epitaxial growth of GaN on GaAs, GaP, Si, and sapphire substrates from GaBr₃ and NH₃
• Highly p-typed Mg-doped GaN films grown with GaN buffer layer
• Novel metalorganic chemical vapor deposition system for GaN growth
• Growth of single crystal GaN substrate using hydride vapor phase epitaxy
• Influence of growth temperature and substrate material on the properties of epitaxial GaN
• Epitaxial growth of cubic and hexagonal GaN on GaAs by gas-source molecular-beam epitaxy
• Substrate-polarity dependence of metal-organic vapor- phase epitaxy-grown GaN on SiC
• Substrate-orientation dependence of GaN single-crystal films grown by metalorganic vapor-phase epitaxy
• Growth of InN on GaAs substrates by the reactive evaporation method
• Growth of AlN/GaN layered structures by gas source molecular-beam epitaxy Growth of AlN/GaN layered structures
• An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy Properties of cubic GaN grown on GaAs
• Growth of epitaxial layers of gallium nitride on silicon carbide and corundum substrates
• Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AIN-coated sapphire substrates
• Photoluminescence of InGaN films grown at high temperature by metalorganic vapor phase epitaxy
• A Microstructural Comparison of the Initial Growth of AlN and GaN Layers on Basal Plane Sapphire and SiC Substrates by Low Pressure Metalorganic Chemical Vapor Deposition
• Structural and Electrical Properties of Reactively Sputtered Inn Thin Films on AlN-Buffered (00.1) Sapphire Substrates: Dependence on Buffer and Film Growth Temperatures and Thicknesses
• Interface chemistry and surface morphology in the initial stages of growth of GaN and AlN on alpha-SiC and sapphire
• A Crystallographic Model of (00.1) Aluminum Nitride Epitaxial Thin Film Growth on (00.1) Sapphire Substrate
• Heteroepitaxial Growth of InN on AlN Nucleated (00.1) Sapphire by Ultrahigh Vacuum Electron Cyclotron Resonance Assisted Reactive Magnetron Sputtering
• Influence of buffer layers on the deposition of high quality single crystal GaN over sapphire substrates
• Optical gain of optically pumped Al_0.1Ga_0.9N/GaN double heterostructure at room temperature
• Development of Chemical Beam Epitaxy for the Deposition of Gallium Nitride
• Photoluminescence of zinc-blende GaN under hydrostatic pressure
• GaN grown on hydrogen plasma cleaned 6H-SiC substrates
• Growth of GaN Films by Combined Laser and Microwave Plasma Enhanced Chemical Vapor Deposition
• A comparative study of GaN epilayers grown on sapphire and SiC substrates by plasma-assisted molecular-beam epitaxy
• Growth of Single Crystal AlxGa1-XN Films on Si Substrates by Metalorganic Vapor Phase Epitaxy
• Transmission Electron Microscopic Observation of AlN/Alpha Al2o3 Heteroepitaxial Interface with Initial Nitriding Ain Layer
• Preparation and Properties of Polycrystalline SiC AlN Solid Solutions
• Ab initio studies of GaN epitaxial growth on SiC
• New Epitaxial Growth Method of Cubic GaN on (100)GaAs Using (ch3)(3)ga, HCl and Nh3
• Pressure-dependent photoluminescence study of wurtzite GaN
• Low Pressure Chemical Vapor Deposition of Iii/V Nitrides Using Organometallics and Hydrazoic Acid Precursors
• Second order Raman spectroscopy of the wurtzite form of GaN
• Lattice Constants, Thermal Expansion and Compressibility of Gallium Nitride
• Thermal stress in GaN epitaxial layers grown on sapphire substrates
• Operation of a compactelectron cyclotron resonancesource for the growth of GaN by MBE
• Chemically Assisted Ion Beam Etching of Gallium Nitride
• Oriented Growth of GaN Films on Sapphire Surface
• Selective growth of zinc-blende, wurtzite, or a mixed phase of gallium nitride by molecular beam epitaxy
• Microstructural characterization of alpha -GaN films grown on sapphire by organometallic vapor phase epitaxy
• Cathodoluminescence study of erbium and oxygen coimplanted gallium nitride thin films on sapphire substrates
• Optical properties and temperature dependence of the interband transitions of cubic and hexagonal GaN
• Current Voltage Characteristic Collapse in Algan/GaN Heterostructure Insulated Gate Field Effect Transistors at High Drain Bias
• Formation of Cubic GaN on (111)b GaAs by Metal Organic Vapor- phase Epitaxy with Dimethylhydrazine
• Thermal expansion of gallium nitride
• High-quality GaN heteroepitaxial films grown by metalorganic chemical vapor deposition
• Theoretical study of GaN growth: A Monte Carlo approach
• Domain Epitaxial Growth of TiN/Si(001), TiN/GaAs(001), and Si/TiN/Si(001) Heterostructures by Laser Physical Vapor Deposition: Theory and Experiment
• Microstructures of GaN films deposited on (001) and (111) Si substrates using electron cyclotron resonance assisted-molecular beam epitaxy
• Characteristics of chemically assisted ion beam etching of gallium nitride
• Homoepitaxial Growth of Cubic GaN by Hydride Vapor Phase Epitaxy on Cubic GaN/GaAs Substrates Prepared with Gas Source Molecular Beam Epitaxy
• Heteroepitaxial wurtzite and zinc-blende structure GaN grown by reactive-ion molecular-beam epitaxy: Growth kinetics, microstructure, and properties
• Growth of gallium nitride thin films by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy
• Photoassisted growth of gallium nitride by gas source molecular beam epitaxy Photoassisted growth of gallium nitride
• Electronic Structure, Surface Composition and Long Range Order in GaN
• Heteroepitaxy, polymorphism, and faulting in GaN thin films on silicon and sapphire substrates
• Growth of zinc blende-GaN on beta -SiC coated (001) Si by molecular beam epitaxy using a radio frequency plasma discharge, nitrogen free-radical source
• Doping of GaAs Using SF6 Plasma Treatment
• Molecular-beam-epitaxy growth of GaN on GaAs(100) by using reactive nitrogen source
• Substrate Nitridation Effects on GaN Grown on GaAs Substrates by Molecular Beam Epitaxy Using RF Radical Nitrogen Source
• Selective Growth of Cubic GaN in Small Areas on Patterned GaAs(100) Substrates by Metalorganic Vapor Phase Epitaxy
• Transmission electron microscope observation of cubic GaN grown by metalorganic vapor phase epitaxy with dimethylhydrazine on (001) GaAs
• Transparent and conductive impurity-doped GaN thin films prepared by an electron cyclotron resonance plasma metalorganic chemical vapor deposition method
• Crystallography of epitaxial growth of wurtzite-type thin films on sapphire substrates
• Metalorganic Molecular Beam Epitaxy of Cubic GaN on (100)GaAs Substrates Using Triethylgallium and Monomethylhydrazine
• Phase Controlled Metal Organic Chemical Vapor Deposition Epitaxial Growth of GaN on GaAs(100) Using Nh3
• GaN Based Iii-v Nitrides by Molecular Beam Epitaxy
• Effects of V/Iii Supply Ratio on Improvement of Crystal Quality of Zincblende GaN Grown by Gas Source Molecular Beam Epitaxy Using RF Radical Nitrogen Source
• In Situ Monitoring of Reflection High Energy Electron Diffraction Oscillation During the Growth of Gallium Nitride Films by Gas Source Molecular Beam Epitaxy
• Epitaxial Growth and Structural, Optical Properties of Cubic GaN on (100) and (111) GaAs Grown by Metalorganic Chemical Vapor Deposition
• Growth and Characterization of P/N Type GaN Grown at Reduced Substrate Temperatures by Plasma Enhanced (pe-) MOCVD
• GaN/Algan Field Effect Transistors for High Temperature Applications
• Stimulated Emission from GaN Grown on SiC
• SiC-a(3)n Alloys and Wide Band Gap Nitrides Grown on SiC Substrates
• Conductivity Control of GaN and Fabrication of UV/Blue GaN Light Emitting Devices
• Surface Orientation Dependence of Growth Rate of Cubic GaN
• Nitridation effects of substrate surface on the metalorganic chemical vapor deposition growth in InN on Si and alpha-Al2O3 substrates
• Heteroepitaxy of Gallium Nitride on (0001), (1012BAR) and (1010BAR) Sapphire Surfaces
• Heteroepitaxial Growth of GaN1-XPx (x Less Than or Equal to 0.09) on Sapphire Substrates
• The Growth of Single Crystalline GaN on a Si Substrate Using AlN as an Intermediate Layer
• Layer-By-Layer Epitaxial Growth of GaN at Low Temperatures
• Metal contacts to gallium nitride
• Growth of GaN by ECR-Assisted MBE
• Progress and Prospects for GaN and the III-V Nitride Semiconductors
• Characterization of Group III-nitride semiconductors by high-resolution electron microscopy
• Growth of AlN by metalorganic molecular beam epitaxy
• Structural properties of InN films grown on GaAs substrates: observation of the zincblende polytype
• Superbright Green InGaN Single-Quantum-Well-Structure Light-Enmitting Diodes
• Growth and characterization of GaN on c-plane (0001) sapphire substrates by plasma-enhanced molecular beam epitaxy
• Growth of GaN on Lattice-Matched Oxide Substrates
• Electrical and structural properties of In_xGa_1-xN on GaAs
• ScAlMgO₄: an Oxide Substrate for GaN Epitaxy
  
• New near-infrared defect luminescence in GaN doped with vanadium by ion implantation
• Electric breakdown in GaN p-n junctions
• Structural properties of GaN films grown on sapphire by molecular beam epitaxy
• Homoepitaxy of GaN on polished bulk single crystals by metalorganic chemical vapor deposition
• Deposition of high quality wurtzite GaN films over cubic (111) MgAl₂O₄ substrates using low pressure metalorganic chemical vapor deposition
• Influence of substrate-induced biaxial compressive stress on the optical properties of thin GaN films
• Novel symmetry in the growth of gallium nitride on magnesium aluminate substrates
• Morphology of luminescent GaN films grown by molecular beam epitaxy
• Dynamics of bound-exciton luminescences from epitaxial GaN
• InGaN MQW Structure Laser Diodes with Cleaved Mirror Facets
• Luminescence and Reflectivity in the Exciton Region of Homoepitaxial GaN layers Grown on GaN Substrates
• Photoluminescence study of the 1.047 eV emission in GaN
• InGaN multi-quantum-well structure laser diodes grown on MgAl₂O₄ substrates
• Nitridation process of sapphire substrate surface and its effect on the growth of GaN
• Carbon-doped boron nitride cold cathodes
• Cleaved GaN facets by wafer fusion of GaN to InP
• AlGaN ultraviolet photoconductors grown on sapphire
• Optical properties near the band gap on hexagonal and cubic GaN
• Epitaxial Growth of Cubic and Hexagonal GaN by Gas Source Molecular Beam Epitaxy Using a Microwave Plasma Nitrogen Source
• Epitaxial Growth of GaAs and GaN by Gas Source Molecular Beam Epitaxy using Organic Group V Compounds
• Hetero-Epitaxial Growth of Cubic GaN on GaAs by Gas-Source Molecular Beam Epitaxy
• Epitaxial Growth of GaN on Sapphire (0001) Substrates by Electron Cyclotron Resonance Molecular Beam Epitaxy
• Gallium Incorporation Kinetics During GSMBE of GaN
• Electron-spin-resonance studies of donors in wurtzite GaN
• Microstructure of GaN epitaxy on SiC using AlN buffer layers
• Temperature dependence of the energy gap in GaN bulk single crystals and epitaxial layer
• Molecular beam epitaxy growth and properties of GaN films on GaN/SiC substrates GaN films on GaN/SiC substrates
• Some new fundamental properties of GaN single-crystal films on SiC and sapphire substrates
• High-quality GaN grown directly on SiC by halide vapour phase epitaxy.
• Thermal stress and strain in III-V nitride films grown on foreign substrates
• Intrinsic optical properties of GaN epilayers grown on SiC substrates: Effect of the built-in strain
• Electrical characteristics of GaN/6H-SiC n-p heterojunctions.
• The excitonic bandgap of GaN, dependence on substrate
• InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
• In situ monitoring and Hall measurements of GaN grown with GaN buffer layers
• Investigation of n- and p-type doping of GaN during epitaxial growth in a mass production scale multiwafer-rotating-disk reactor Investigation of n- and p-type doping
• Strongly localized excitons in gallium nitride
• Infrared reflection of GaN and AlGaN thin film heterostructures with AlN buffer layers
• Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
• Growth defects in GaN films on sapphire: The probable origin of threading dislocations
• Electron microscopy characterization of GaN films grown by molecular-beam epitaxy on sapphire and SiC Electron microscopy characterization of GaN films
• Characterization of structural defects in wurtzite GaN grown on 6H SiC using plasma-enhanced molecular beam epitaxy
• Formation of threading defects in GaN wurtzite films grown on nonisomorphic substrates
• Microstructure of GaN epitaxially grown on hydrogen plasma cleaned 6H-SiC substrates
• Growth and characterization of AlInGaN quaternary alloys
• High Quality GaN Growth on (0001) Sapphire by Ion-Removed Electron Cyclotron Resonance Molecular Beam Epitaxy and First Observation of (2x2) and (4x4) Reflection High Energy Electron Diffraction Patterns
• Edge electroluminescence of GaN-based pn structures grown on 6H-SiC
• Spontaneous and stimulated emission from photopumped GaN grown on SiC
• Crystal Growth of column-III nitride semiconductors and their electrical and optical properties
• Microstrucutral evolution and defect formation during the initial stages of the growth of SiC and AlN on 6H-SiC (0001) substrates
• Growth of GaN(0001)1 (times) 1 on Al₂O₃(0001) by gas-source molecular beam epitaxy
• Edge luminescence of AlN-GaN solid solutions
• Synthesis of AlN Thin Films on Sapphire Substrates by Chemical Vapor Deposition of AlCl3-NH3 System and Surface Acoustic Wave Properties
• MBE of GaN on 6H-SiC and GaAs substrates using hydrazine as a nitrogen source.
• Nitride pn junctions grown on SiC substrates.
• Lattice-matching SiC substrates with GaN.
• An optically pumped GaN- AlGaN vertical cavity surface emitting laser
• The dependence of the electrical characteristics of the GaN epitaxial layer on the thermal treatment of the GaN buffer layer
• High responsitivity intrinsic photoconductors based on Al_xGa_1-xN
• Growth of Al_xGa_1-xN:Ge on sapphire and silicon substrates
• AlGaN pn junctions
• Low resistance ohmic contacts on wide band-gap GaN
• Low-temperature epitaxial growth and photoluminescence characterization of GaN
• Temperature-mediated phase selection during growth of GaN on (111)A and (111)B GaAs substrates
• Study of chemically assisted ion beam etching of GaN using HCl gas
• High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes
• InGaN-GaN based light-emitting diodes over (111) spinel substrates
• Undoped and doped GaN thin films deposited on high-tepmerature monocrystalline AlN buffer layers on vicinal and on-axis alpha-6H-SiC substrates via organometallic vapor phase epitaxy on alpha-6H-SiC(0001) via organometallic vapor phase epitaxy
• High quality self-nucleated Al_xGa_1-x N layers on (00.1) sapphire by low-pressure metalorganic chemical vapor deposition
• Effect of Substrate Temperature on the Doping Profiles of Si in Selectively doped AlGaAs/GaAs/AlGaAs Double Heterojuction Structures
• Metal semiconductor field effect transistor based on single crystal GaN
• 75 A GaN channel modulation doped field effect transistors
• Monolithic Array of LEDs for the Generation of Light at Multiple Wavelengths and its use for Multicolor Display Applications
• Exciton fine structure in undoped GaN epitaxial films
• Study of GaN films grown by metalorganic chemical vapour deposition
• Research on GaN MODFET's
• Surface morphology of as grown and annealed bulk GaN crystals
• The Morphology and Cathodoluminescence of GaN Thin Films
• Photoluminescence study of high quality InGaN/GaN single heterojunctions
• Optical studies of GaN and GaN/AlGaN heterostructures on SiC substrates
• Optical degradation of InGaN/AlGaN light-emitting diode on sapphire substrate grown by metalorganic chemical vapor deposition
• Ridge-geometry InGaN MQW structure laser diodes
• Growth, Doping and Characterization of Al_xGa_1-xN Thin Film Alloys on 6H-SiC(0001) Substrates
• Optical absorption near the band edge in GaN grown by metalorganic chemical-vapor deposition
• Investigation of GaN deposition on Si, Al₂O₃, and GaAs using in situ mass spectroscopy of recoiled ions and reflection high-energy electron diffraction Investigation of GaN deposition
• Molecular beam epitaxy growth and properties of GaN, Al_xGa_1-xN, and AlN on GaN/SiC substrates MBE growth and properties of GaN, Al_xGa_1-xN, and AlN
• Silicon-based group IV heterostructures for optoelectronic applications Silicon-based group IV heterostructures
• Molecular beam epitaxy growth and characterization of GaN and Al_xGa_1-xN on 6H-SiC MBE growth and characterization
• Patterning of AlN, InN, and GaN in KOH-based solutions
• Supersonic-jet-assisted growth of GaN and GaAs films Supersonic-jet growth of GaN and GaAs
• Preparation of GaN films on sapphire by metalorganic chemical vapor deposition using dimethylhydrazine as nitrogen source
• X-ray crystallographic study of GaN epitaxial films on Al₂O₃(0001) substrates with GaN buffer layers
• Growth of GaN on sapphire (0001) using a supersonic jet of plasma-generated atomic nitrogen
• Characteristics of InGaN multi-quantum-well-structure laser diodes
• Growth and properties of scandium epitaxial films on GaN
• Reactive molecular beam epitaxy of wurtzite GaN: Materials characteristics and growth kinetics
• Measurement of AlN/GaN (0001) heterojunction band offsets by x-ray photoemission spectroscopy
• Residual strain in GaN epilayers grown on sapphire and (6H)SiC substrates
• Growth defects in GaN films on 6H- SiC substrates
• Undoped and doped GaN thin films deposited on high- temperature monocrystalline AlN buffer layers on vicinal and on-axis alpha(6H)-SiC(0001) substrates via organometallic vapor phase epitaxy
• Comparative Raman studies of cubic and hexagonal GaN epitaxial layers
• Low interface trap density for remote plasma deposited SiO₂ on n-type GaN
• Room-temperature stimulated emission in GaN/AlGaN separate confinement heterostructures grown by molecular beam epitaxy
• Impurity distribution in GaN layers obtained by the molecular-beam epitaxy method
• Hollow-anode plasma source for molecular beam epitaxy of gallium nitride Ion sources
• Chemical vapor deposition of aluminum and gallium nitride thin films from metalorganic precursors CVD of Al and GaN thin films
• Room-temperature photoenhanced wet etching of GaN
• Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition
• Spatially resolved photoluminescence and Raman scattering experiments on the GaN/substrate interface
• Highly resistive CH-doped GaN grown by plasma-assisted metalorganic chemical vapor deposition
• Piezoresistive effect in wurtzite n-type GaN
• Spatial distribution of the luminescence in GaN thin films
• Kinetics of photoconductivity in n-type GaN photodetector
• Molecular beam epitaxy of cubic GaN on a (001) GaAs substrate using hydrazine
• High-quality GaN epitaxial layer grown by metalorganic vapor phase epitaxy on (111) MgAl[sub 2]O₄ substrate
• Auger electron spectroscopy, x-ray diffraction, and scanning electron microscopy of InN, GaN, and Ga(AsN) films on GaP and GaAs(001) substrates InN, GaN, and Ga(AsN) films on GaP and GaAs(001) substrates
• Optical phonons of hexagonal and cubic GaN studied by infrared transmission and Raman spectroscopy
• Growth of GaN films by hot wall epitaxy
• Plasma-assisted low-pressure metalorganic chemical vapor deposition of GaN on GaAs substrates
• Band gap of GaN films grown by molecular-beam epitaxy on GaAs and GaP substrates
• Surface-mode stimulated emission from optically pumped GaInN at room temperature
• Growth of In_xGa_1-xN and In_xAl_{1- x}N on GaAs metalorganic molecular beam epitaxy Growth of In_xGa_{1- x}N on GaAs by MOMBE
• Effect of substrate pretreatment on growth of GaN on (0001) sapphire by low pressure metalorganic chemical vapor deposition Effect of substrate pretreatment on growth of GaN
• High quality AlN and GaN epilayers grown on (00.1) sapphire, (100), and (111) silicon substrates
• Growth and characterization of GaN on sapphire (0001) using plasma-assisted ionized source beam epitaxy Growth and characterization of GaN on sapphire (0001)
• Influence of substrate electrical bias on the growth of GaN in plasma-assisted epitaxy Influence of substrate electrical bias
• Approach to obtain high quality GaN on Si and SiC-on- silicon-on-insulator compliant substrate by molecular-beam epitaxy Approach to obtain high quality GaN
• Properties of GaN films grown under Ga and N rich conditions with plasma enhanced molecular beam epitaxy
• Photoluminescence investigation of GaN films grown by metalorganic chemical vapor deposition on (100) GaAs
• The effect of thermal annealing on GaN nucleation layers deposited on (0001) sapphire by metalorganic chemical vapor deposition
• Low pressure metalorganic chemical-vapor deposition of cubic GaN over (100) GaAs substrates
• Crystalline structure of AlGaN epitaxy on sapphire using AlN buffer layers
• Vertical-cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperature
• Structural characterization of GaN and GaAs_xN_1-x grown by electron cyclotron resonance-metalorganic molecular beam epitaxy Structural characterization of GaN and GaAs@/I[sub x]N@/I_1-x
• Growth by molecular beam epitaxy and electrical characterization of Si-doped zinc blende GaN films deposited on beta -SiC coated (001) Si substrates
• Thermal stability of GaN thin films grown on (0001) Al₂O₃, (0112) Al₂O₃ and (0001)_Si 6H-SiC substrates
• Growth of group III nitrides on Si(111) by plasma- assisted molecular beam epitaxy Growth of group III nitrides on Si(111)
• Schottky barrier photodetector based on Mg-doped p-type GaN films
• p-type zinc-blende GaN on GaAs substrates
• Cryogenic growth of Al nitride on GaAs(110): X-ray- photoemission spectroscopy and inverse-photoemission spectroscopy
• Electron-induced nitridation of GaAs(100) with ammonia Electron-induced nitridation of GaAs(100)
• Transparent and Conductive GaN thin films prepared by an ECR plasma MOCVD method
• The nature of donor conduction in n-GaN
• Study of Schottky contacts on n-Ga_0.51In_0.49P by low-pressure metal-organic chemical-vapor deposition
• Deposition and surface characterization of high quality single crystal GaN layers
• High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayers
• Growth of Al nitride layers on GaAs(100) by reaction with condensed ammonia
• Predicted elastic constants and critical layer thicknesses for cubic phase AlN, GaN, and InN on beta -SiC
• Growth of boron nitride films by gas molecular-beam epitaxy Growth of boron nitride films by gas source MBE
• Photoemission study of nitrogen-implanted GaAs surfaces
• The multiposition phenomenon in heteroepitaxial structures GaN/Al₂O₃
• Study of cracking mechanism in GaN/alpha -Al₂O₃ structure
• Structural properties of GaN grown on SiC substrates by HVPE
• Two-dimensional electron gas properties of AlGaN/GaN heterostructures grown on 6H(en-dash) SiC and sapphire substrates
• Time resolved photoluminescence spectroscopy on GaN epitaxial layers
• GaN on 6H-SiC-structural and optical properties
• Growth and Doping of AlGaN Alloys by ECR-assisted MBE
• Mass Spectroscopy Study of GaN Metalorganic Chemical Vapor Deposition
• Growth of Ga-face and N-face GaN films using ZnO Substrates
• Intrinsic optical properties of GaN epilayers grown on SiC substrates: Effect of the built-in strain
• Room temperature epitaxy of Pd films on GaN under conventional vacuum conditions
• Metalorganic chemical vapor deposition of monocrystalline GaN thin films on beta- LiGaO[sub 2] substrates
• Nitridation of sapphire. Effect on the optical properties of GaN epitaxial overlayers
• Growth of High-Quality AlN and AlN/GaN/AlN Heterostructure on Sapphire Substrate
• Single Domain Hexagonal GaN Films on GaAs (100) Vicinal Substrates Grown by Hydride Vapor Phase Epitaxy
• Some aspects of GaN growth on GaAs (100) substrates using MBE with an RF activated nitrogen plasma source
• Growth and optical properties of GaN grown by MBE on novel lattice-matched oxide substrates
• Structural characterization of GaN films on GaAs (100) substrate grownby hydride VPE
• Heteroepitaxial growth of 3C-SiC on large area Si substrates and evaluations
• Comparison of the physical properties of GaN thin films deposited on (0001) and (0112) sapphire substrates
• GaN Growth Using GaN Buffer Layer
• Excitonic Emission in GaN Films on AlN Substrates Using Microwave-Excited N Plasma Method
• Reactive Fast Atom Beam Etching of a Wide-gap Semiconductor GaN
• Electronic and optical properties of the group-III nitrides, their heterostructures and alloys
• The Growth of Doped Epitaxial GaN Films on Sapphire Substrates in a Production Scale Multi-Wafer Rotating Disc MOCVD System
• Growth kinetics and structural quality in GaN epitaxy by low pressure MOVPE
• Microstructure, growth mechanisms and electro-optical properties of heteroepitaxial GaN layers on sapphire (0001) substrates
• ECR RIE-Enhanced Low Pressure Plasma Etching of GaN/InGaN/AlGaN Heterostructures
• GaN Based p‐n Structures Grown on SiC Substrates
• Raman Determination of the Phonon Deformation Potentials in α-GaN
• Evidence for Shallow Acceptor Levels in MBE Grown GaN
• Correlation between surface morphologies and crystallographic structures of GaN layers grown by MOCVD on sapphire
• Optical Properties of Nitride-based Structures Grown on 6H-SiC
• Exciton Dynamics in Mg Doped GaN Grown by MOCVD on GaN Substrate
• AlGaInN Quaternary Alloys by MOCVD
• Growth of GaN films on (0 0 1) and (1 1 1) GaAs surfaces by a modified MBE method
• Cleaved cavity optically pumped InGaN(en-dash) GaN laser grown on spinel substrates
• Properties of GaN grown at high rates on sapphire and on 6H- SiC
• Growth of c-axis oriented gallium nitride thin films on an amorphous substrate by the liquid-target pulsed laser deposition technique
• Strain Effect on electronic and optical properties of GaN/AlGaN QW Lasers
• Effect of In Situ Thermal Cycle Annealing on GaN Film Properties Grown on (001) and (111) GaAs, and Sapphire Substrates
• Real-Time Monitoring of the Surface Stoichiometry During Molecular Beam Epitaxy of Cubic GaN on (001)GaAs by RHEED
• MBE Growth and Properties of GaN and Al_xGa_1-xN on GaN/SiC Substrates
• Dry Etching of GaN Using Chemically Assisted Ion Beam Etching with HCl and H2/Cl2
• Epitaxial growth and optical transitions of cubic GaN films
• Oscillator strengths for optical band-to-band processes in GaN epilayers
• Surface kinetics of zinc-blende (001) GaN
• High Resistivity Al_xGa_1-xN Layers Grown by MOCVD
• Initial Growth Prismatic Domains in Cyclotron Assisted MBE of GaN/SiC
• GaN Layers Grown by HVPE on P-type 6H-SiC Substrates
• Inheritance of zinc-blende structure from 3C-SiC/Si(001) substrate in growth of GaN by MOCVD
• Growth of InN by chloride-transport VPE
• Room Temperature pulsed operation of nitride based MQW laser diodes with cleaved facets on conventional c-face sapphire substrates
• TEM of sublimation grown GaN single crystal and GaN homoepitaxial films
• Thermal stability and desorption of Group III nitrides prepared by metal organic chemical vapor deposition
• Wide-gap Semiconductor (In,Ga)N
• Growth and Properties of InGaN and AlInGaN Thin Films on (0001) Sapphire
• Refractive Index of AlGaInN Alloys
• Tensile strain relaxation in GaN_xP_1-x (x 0.1) grown by chemical beam epitaxy
• Low-temperature growth of aluminum nitride thin films on silicon by reactive radio frequency magnetron sputtering
• Low temperature growth of AlN(0001) on Al(111) using hydrazoic acid (HN3)
• Surface Morphology Study for Hexagonal GaN Grown on GaAs(100)
• The influence of strain and mosaic structure on the electrical and optical properties of GaN films on sapphire substrates
• Photoluminescence from GaN films grown by MBE on an LiGaO2 substrate
• Homoepitaxial layers of gallium nitride grown by metal organic vapour phase epitaxy
• Exciton spectra and spin-orbit splitting in GaN epitaxial films
• Auto lattice matching effect for AlInAs grown by MBE at high substrate temperature
• Alternative microstructure of GaN nucleation layers grown by low pressure metal-organic vapor phase epitaxy on sapphire substrate
• Mg-doped green light emitting diodes over cubic (111) MgAl2O3 substrates
• Growth and characterization of GaN thin films on SiC SOI substrates
• Correlation of biaxial strains, bound exciton energies, and defect microstructures in GaN films grown on AlN/6H-SiC (0001) substrates
• Hot plasma chemical vapor deposition of GaN on GaAs(100) substrate
• Epitaxial relationships between GaN and Al2O3 (0001) substrates
• MOVPE growth of thick homogeneous InGaN directly on sapphire substrate using AlN buffer layer
• Optical and magnetic resonance characterization of undoped and doped Wurtzite GaN films deposited on sapphire substrates,
• Metalorganic vapor-phase epitaxy of cubic Al(x)Ga(1-x)N alloy on a GaAs (100) substrate
• A near-field scanning optical microscopy study of the photoluminescence from GaN films
• Growth of GaN without yellow luminescence
• The effect of the III/V ratio and substrate temperature on the morphology and properties of GaN and AlN layers grown by molecular beam epitaxy on Si(111)
• Halide vapor phase epitaxy of gallium nitride films on sapphire and silicon substrates.
• The selective growth in hydride vapor phase epitaxy of GaN
• Role of Interfacial-Charge in the Growth of GaN on 6H-SiC
• Growth of GaBN Ternary Solutions by Organometallic Vapor Phase Epitaxy
• The Effect of Substrate Misorientation on the Optical, Structural, and Electrical Properties of GaN Grown on Sapphire by MOCVD
• Structure of GaN Films Grown by Molecular Beam Epitaxy on (0001) Sapphire
• Characteristics of GaN Stripes Grown by Selective-Area Metalorganic Chemical Vapor Deposition
• Growth of Zinc-Blende GaN on GaAs (100) Substrates at High Temperature Using Low-Pressure MOVPE with a Low V/III Molar Ratio
• Photoluminescence Characteristics of GaN/InGaN/GaN Quantum Wells
• Ion Implantation Doping of OMCVD Grown GaN
• Basic Studies of Gallium Nitride Growth on Sapphire by Metalorganic Chemical Vapor Deposition and Optical Properties of Deposited Layers
• Doping of Gallium Nitride Using Disilane
• Cubic Dominant GaN Growth on (001) GaAs Substrates by Hydride Vapor Phase
• LiGaO₂ Single Crystals for a Substrate of Hexagonal GaN Thin Films
• Growth of GaN and Al_0.2Ga_0.8N on Patterened Substrates via Organometallic Vapor Phase Epitaxy
• Raman and Electrical Characterizations of a-GaAs_1-xN_x Thin Films Grown on c-Si(p) Substrates by N₂ Reactive Sputtering
• Metalorganic Vapor Phase Epitaxy Growth of a High-Quality GaN/InGaN Single Quantum Well Structure Using a Misoriented SiC Substrate
• Experimental Surface Acoustic Wave Properties of AlN Thin Films on Sapphire Substrates
• MBE Growth and Properties of GaN on GaN/SiC Substrates
• X-ray diffraction effects in Ga and Al arsenide structures MBE-grown on slightly misoriented GaAs (0 0 1) substrates
• Epitaxial Growth of InN by Plasma-assisted MOCVD
• GSMBE growth of GaN on c-, a-, r- and m-plane sapphire and silica glass substrates
• Alternative substrates for gallium nitride epitaxy : photoluminescence and morphological investigations
• High quality GaN-InGaN heterostructures grown on (111) silicon substrates
• Dislocation Etch Pits in GaN Epitaxial Layers Grown on Sapphire Substrates
• GaN Thin Film Growth on LiGaO₂ Substrate with a Multi-Domain Structure
• MOVPE of Thick InGaN on Sapphire Substrate
• Group IVB refractory metal crystals as lattice-matched substrates for growth of the group III nitrides by plasma-source MBE
• Photoluminescence excitation spectroscopy of GaN thin layers as a function of temperature
• Growth and optical properties of GaN grown by MBE on novel lattice-matched oxide substrates
• The growth of p-type epitaxial GaN films on saphire substrates in a production scale multi-wafer rotating disc MOCVD reactor
• Epitaxial growth of GaN films on silicon substrates by MOVPE
• Crystal orietation of GaN films grown on (001) GaAs substrates by plasma-assisted metalorganic chemical vapor deposition
• Nitridation of GaAs (111)B substrates and heteroepitaxial growth of InN on the nitrided substrates
• RBS spectra of InN films grown on saphire substrate
• Violet light emission from GaN/Al_0.05Ga_0.95N injection diode grown on 6H-SiC substrate by low-pressure MO-VPE
• Electrical characteristics of GaN/6H-SiC n-p heterojunctions.
• Studies of Mg-GaN grown by MBE on GaAs(111)B substrates
• Effects of substrate type on the characteristics of GaN epitaxial films grown by molecular beam epitaxy
• MOVPE growth optimization of high quality InGaN films.
• High Frequency AlGaN/GaN MODFET's
• Evidence of 2D-3D transition during the first stages of GaN growth on AlN
• Luminescent properties of gallium nitride layers grown by vapor-phase epitaxy in a chloride system on silicon carbide substrates
• Optical nonlinearities of Gallium Nitride
• AlGaN based materials and heterostructures
• Optical constants of rf sputtered hydrogenated amorphous Si
• AlGaN/GaN/AlGaN double heterojunction blue LEDs on 6H SiC substrates
• Comparison of Luminescence and Physical Morphologies of GaN Epilayers
• Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVD
• MOVPE Growth and Structural Characterization of Al_xGa_1-xN
• Properties of InGaN deposited on Glass at Low Temperature
• Morphology and X-Ray Diffraction Peak Widths of Aluminum Nitride Single Crystals Prepared by the Sublimation Method
• Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy
• Effects of Dissolved Oxygen on Anodic Etching of n-Type GaN Films Using a Sodium Hydroxide Electrolyte
• Crystal Structure of GaN Grown on 3C-SiC Substrates by Metalorganic Vapor Phase Epitaxy
• Gas Source Molecular Beam Epitaxy Growth of GaN-Rich Side of GaNP Alloys and Their Observation by Scanning Tunneling Microscopy
• Epitaxial Growth and Orientation of GaN on (1 0 0) γ-LiAlO2
• Physical Properties of Bulk GaN Crystals Grown by HVPE
• Time-resolved photoluminescence studies of InGaN/GaN multiple quantum wells
• Study of high quality AlN layers grown on Si(111) substrates by plasma-assisted molecular beam epitaxy
• Surface deformation of the InGaN thin films deposited on a sapphire substrate
• High-temperature performance of AlGaN/GaN HFET's on SiC substrates
• High transconductance AlGaN/GaN heterostructure field effect transistors on SiC substrates
• The Effect of Substrate Surface Roughness on GaN Growth Using MOCVD Process
• Characterization of MOVPE-Grown (Al, In, Ga) N Heterostructures by Quantitative Analytical Electron Microscopy
• Electrical and Optical Properties of Oxygen Doped GaN Grown by MOCVD Using N₂O
• Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters
• Microstructure of GaN epitaxially grown on hydrogen plasma cleaned 6H-SiC substrates
• Surface Treatment and Layer Structure in 2H-GaN Grown on the (0001)_Si surface of 6H-SiC by MBE
• Raman characterization of the optical phonons in Al_xGa_1-xN layers grown by MBE and MOCVD
• InGaN Laser Diode Grown on 6H-SiC Substrate Using Low-Pressure Metal Organic Vapor Phase Epitaxy
• Exciton dynamics in thick GaN MOVPE epilayers deposited on sapphire.
• Growth of GaN on GaAs(111)B by Metalorganic Hydrogen Chloride VPE Using Double Buffer Layer
• Structural Analysis of Cubic GaN through X-Ray Pole Figure Generation
• Impurity Contamination of GaN Epitaxial Films From the Sapphire, SiC, and ZnO Substrates
• Reliable, Reproducible, and Efficient MOCVD of III-Nitrides in Production Scale Reactors
• Growth of GaN Thin Films on Sapphire Substrate by Low- Pressure MOCVD
• MBE Growth of Strain Engineered GaN Thin Films Utilizing a Surfactant
• Aluminum Nitride Thin Films Grown by Plasma-Assisted Pulsed Laser Deposition on Si Substrates
• Pulsed Laser Deposition of Gallium Nitride on Sapphire
• Gallium Nitride Doped With Zinc and Oxygen - The Crystal for the Blue Polarized Light-Emitting Diodes
• Polar-Twinned Defects in LiGaO₂ Substrates Lattice Matched With GaN
• Substrate Effects on the Growth of InN
• Microstructures of GaN Films Grown on a LiGaO₂ New Substrate by Metalorganic Chemical Vapor Deposition
• Dependence of the Residual Strain in GaN on the AlN Buffer Layer Annealing Parameters
• Characterization of the Substrate/Film Interface in GaN Films by Image Depth Profiling Secondary Ion Mass Spectrometry (SIMS)
• Initial Stages of MOCVD Growth of Gallium Nitride Using a Multistep Growth Approach
• Plasma Cleaning and Nitridation of Sapphire Substrates for Al_xGa_1-xN Epitaxy as Studied by ARXPS and XPD
• Resonant Raman Scattering in GaN/Al_0.15Ga_0.85N and In_yGa_1-yN/GaN/Al_xGa_1-xN Heterostructures
• Raman Scattering and Photoluminescence of Mg-Doped GaN Films Grown by Molecular-Beam Epitaxy
• High-Pressure Raman Scattering of Biaxially Strained GaN on GaAs
• Optical Anisotropy of the Optical Response for Strained GaN Epilayers Grown Along the <10-10> Direction
• X-ray Photoelectron Diffraction Measurements of Hexagonal GaN(0001) Thin Films
• A Chemical and Structural Study of the AlN-Si Interface
• TEM/HREM Analysis of Defects in GaN Epitaxial Layers Grown by MOVPE on SiC and Sapphire
• Luminescence Related to Stacking Faults in Heteroepitaxially Grown Wurtzite GaN
• Characterization of Al_xGa_1-xN Films Prepared by Plasma- Induced Molecular-Beam Epitaxy on c-Plane Sapphire
• Dry Etching of GaN Using Reactive Ion-Beam Etching and Chemically Assisted Reactive Ion-Beam Etching
• Recovery of Structural Defects in GaN After Heavy Ion Implantation
• Low Resistance Contacts to p-Type GaN
• Molecular-Dynamics Simulation of Transport in Diamond and GaN: Role of Collective Excitations
• Effect of Hydrogen Chloride on the Capacitance-Voltage Characteristics of MOCVD-Grown AlN/6H-SiC MIS Structures
• Growth of Ga_1-xB_xN by Molecular Beam Epitaxy
• GaInN/GaN Multi-Quantum Well Laser Diodes Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
• DC and microwave performance of high-current AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substrates
• Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
• Defect structure in selectively grown GaN films with low threading dislocation density
• InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
• Low-dislocation-density GaAs epilayers grown on Ge-coated Si substrates by means of lateral epitaxial overgrowth
• Gallium Incorporation Kinetics During GSMBE of GaN
• Study of the Epitaxial Lateral Overgrowth (ELO) Process for GaN on Sapphire Using Scanning Electron Microscopy and Monochromatic Cathodoluminescence
• Fabrication and Characterization of GaN/AlGaN Ultraviolet-Band Heterojunction Photodiodes
• Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates
• Crystal defects and optical properties of GaN grown with different techniques: stacking fault related luminescence
• Microstructure and growth morphology as related to electro-optical properties of heteroepitaxial wurzite GaN on sapphire (0001) substrates
• High Quality Homoepitaxial GaN Grown by Molecular Beam Epitaxy with NH₃ on Surface Cracking
• Effect of buffer layer and substrate surface polarity on the growth by molecular beam epitaxy of GaN on ZnO
• Growth and Optical Properties of GaN grown by MBE on novel lattice-matched oxide substrates
• MOCVD growth of GaN films on lattice-matched oxide substrates
• Blue Light-Emitting Diodes on GaN Substrates, Growth and Characterization
• Growth of GaN on Indium Tin Oxide/Glass Substrates by RF Plasma-Enhanced Chemical Vapor Deposition Method
• High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates
• Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN
• Step-Flow Metalorganic Vapor Phase Epitaxy of GaN on SiC Substrates
• Influence of As Autodoping from GaAs Substrates on Thick Cubic GaN Growth by Halide Vapor Phase Epitaxy
• Compositional Inhomogeneity of InGaN Grown on Sapphire and Bulk GaN Substrates by Metalorganic Chemical Vapor Deposition
• Influence of substrate-induced misfit stresses on the miscibility gap in epitaxial layers: Application to III-V alloys
• MBE Growth of Cubic GaN on GaAs Substrates
• Growth optimization and doping with Si and Be of high quality GaN on Si(111) by molecular beam epitaxy
• Nano-Tubes in GaN
• The effect of III/V ratio and substrate temperature on the morphology and properties of GaN and AlN-layers grown by molecular beam epitaxy on Si(111)
• Lateral overgrowth of GaN on patterned GaN/sapphire substrate via selective metal organic vapour phase epitaxy: a route to produce self supported GaN substrates
• Effect of Magnesium and Silicon on the lateral overgrowth of GaN patterned substrates by Metal Organic Vapor Phase Epitaxy
• Selective growth of wurtzite GaN and Al_xN on GaNand Al_xGa_1-xN on GaN/sapphire substrates bymetalorganic vapor phase epitaxy
• GaN epitaxial growth on sapphire (0001): the role of the substrate nitridation
• fabrication of GaN hexagonal pyramids on dot-patterned GaN/Sapphire substrates via selective metalorganic vapor phase epitaxy
• Structural properties of ZnSe layers grown on (001) GaAs substrates tilted toward [110] and [010]
• ZnCdSe/ZnSe quantum-well laser-diode on a (711)A GaAs substrate
• Gas source molecular beam epitaxy of wurtzite GaN on sapphire substrates using GaN buffer layers
• Photoluminescence properties of cubic GaN grown on GaAs(100) substrates by metalorganic vapor phase epitaxy
• Effects of substrate orientation on the valence band splittings and valence band offsets in GaN and AlN films
• Lateral overgrowth of GaN on patterned GaN/Sapphire substrate via selective metalorganic vapour phase epitaxy: a route to self supported GaN substrates
• GaN growth on Si (111) substrate using oxidized AlAs as an intermediate layer
• Selective Area Growth of GaN Directly on (0001) Sapphire by the HVPE Technique
• Growth of GaN epitaxial layers on sapphire and SiC substrates
• Growth and properties of single crystalline GaN substrates and homoepitaxial layers
• Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy
• Optical properties of GaN epilayers grown on Si (111) and Si (001) substrates
• Time of Flight Mass Spectroscopy of Recoiled Ions Studies of Gallium Nitride Thin Film Deposition by Various Molecular Beam Epitaxial Methods
• Heterostructure for UV LEDs Based on Thick AlGaN Layers
• Structural properties of MOVPE GaN layers grown by a new multi-buffer aproach
• Optical Properties of GaNAs Grown by MBE
• Crystal Morphology and Optical Emissions of GaN layers grown on Si(111) substrates by Molecular Beam Epitaxy
• Determination of piezoelectric fields in GaInN strained quantum wells using the quantum-confined Stark effect
• Properties of GaN epilayers grown on misoriented sapphire substrates
• Localized Epitaxy of GaN by HVPE on patterned Substrates
• Nucleation of AlN on the (7×7) Reconstructed Silicon (1 1 1) Surface
• Macro- and microstrains in MOCVD-grown GaN
• Current status of GaN crystal growth by sublimation sandwich technique

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