References with nakamura in the author list

• In situ monitoring of GaN growth using interference effects
• High-power GaN p-n junction blue-light-emitting diodes
• Highly p-typed Mg-doped GaN films grown with GaN buffer layer
• Novel metalorganic chemical vapor deposition system for GaN growth
• Transmission Electron Microscopic Observation of AlN/Alpha Al2o3 Heteroepitaxial Interface with Initial Nitriding Ain Layer
• Superbright Green InGaN Single-Quantum-Well-Structure Light-Enmitting Diodes
• InGaN/AlGaN Double-Heterostructure Blue LED's
• InGaN MQW Structure Laser Diodes with Cleaved Mirror Facets
• Excitonic emissions from hexagonal GaN epitaxial layers
• InGaN multi-quantum-well structure laser diodes grown on MgAl₂O₄ substrates
• InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
• Candela-class high-brightness InGaN/AlGaN double- heterostructure blue-light-emitting diodes
• In situ monitoring and Hall measurements of GaN grown with GaN buffer layers
• Growth of InxGa(1-x)N compound semiconductors and high-power InGaN/AlGaN double heterostructure violet-light-emitting diodes
• High-Brightness InGaN Blue,Green and Yellow Light-Emitting Diodes with Quantum Well Structures
• Effects of biaxial strain on exciton resonance energies of hexagonal GaN heteroepitaxial layers
• First Successful III-V Nitride Based Laser Diodes
• High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes
• Si- and Ge doped GaN films grown with GaN buffers layers
• High brightness InGaN/AlGaN double-heterostructure light-emitting diodes
• Ridge-geometry InGaN MQW structure laser diodes
• Characteristics of InGaN multi-quantum-well-structure laser diodes
• Paramagnetic resonance in GaN-based light emitting diodes
• InGaN/AlGaN blue-light-emitting diodes InGaN/AlGaN blue LEDs
• High-power InGaN/GaN double-heterostructure violet light emitting diodes
• In_xGa_(1-x)N/In_yGa_(1-y)N superlattices grown on GaN films
• LUMINESCENCE SPECTRA OF SUPERBRIGHT BLUE AND GREEN InGaN/AlGaN/GaN LIGHT-EMITTING DIODES
• Recombination dynamics of excitons and biexcitons in a hexagonal GaN epitaxial layer
• GaN Growth Using GaN Buffer Layer
• Thermal Annealing Effects on P-Type Mg-Doped GaN Films
• Room Temperature CW Operation of InGaN MQW Structure Laser Diodes
• Magnetic Resonance Studies of GaN Based Light Emitting Diodes
• The Blue Laser Diode - GaN based Light Emitters and Lasers
• High-Quality InGaN Films Grown on GaN Films
• First III-V Nitride Violet Laser Diodes
• Biaxial strain dependence of exciton resonance energies in wurtzite GaN
• Optical gain and carrier lifetime of InGaN multi-quantum well structure laser diodes,
• Continuous-wave operation of InGaN multi-quantum-well-structure laser diodes at 233 K,
• Spontaneous emission of localized excitons in InGaN single and multiquantum well structures
• Recombination dynamics of localized excitons in In_{0. 20}Ga_{0. 80}N-In_{0. 05}Ga_{0. 95}N multiple quantum wells,
• Role of self-formed InGaN quantum dots for exiton localization in the purple laser diode emitting at 420 nm
• Photocurrent spectra and gain spectra of InGaN multi-quantum-well structure laser diodes
• Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes
• Gallium Nitride and Related Materials
• Nanopipes and Inversion Domains in High-Quality GaN Epitaxial Layers
• Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser dides with lifetimes of 27 hours
• Longitudinal mode spectra and ultrashort pulse generation of InGaN multiquantum well structure laser diodes
• Luminescence from localized states in InGaN epilayers
• Subband emissions from InGaN multi-quantum-well laser diodes under room-temperature continous wave operation
• Biexciton luminescence from GaN epitaxial layers
• Exciton Spectra of Cubic and Hexagonal GaN Epitaxial Films
• Urbach-Martienssen tails in a wurtzite GaN epilayer
• Observation of coreless dislocations in alpha-GaN
• Fabrication of blue and green nitride light-emitting diodes
• Method of manufacturing p-type compound semiconductor
• Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime
• Blue-Green Light-Emitting Diodes and Violet Laser Diodes
• Optical Phonons in GaN
• Recombination dynamics of localized excitons inIn_{0. 20}Ga_{0. 80}N-In_{0. 05}Ga_{0. 95}N multiple quantum wells
• Cd-doped InGaN films grown on GaN films
• Si-doped InGaN films grown on GaN films
• Hole compensation mechanism of p-type GaN films
• III-V Nitride Based Light-Emitting Devices
• Failure of the Modal Gain Model in a GaN Based Laser Diode
• Valence Band Physics in Wurtzite GaN
• High-Power, Long-Lifetime InGaN Multi-Quantum-Well-Structure Laser Diodes
• InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
• Gain spectroscopy of continuous wave InGaN multi-quantum well laser diodes
• Nitride Semiconductors
• Determination of the atomic structure of inversion domain boundaries in GaN by transmission electron microscopy
• Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates
• Spatially resolved cathodoluminescence spectra of InGaN quantum wells
• Exciton localization in InGaN quantum well devices
• High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates
• Amber InGaN-Based Light-Emitting Diodes Operable at High Ambient Temperatures
• Localized exciton and its stimulated emission in surface mode from single-layer In[subX]Ga[sub1-X]N
• Exciton localization in InGaN quantum well devices
• RT-CW Operation of InGaN multi-quantum-well structure laser diodes
• Brillouin scattering study of gallium nitride: elastic stiffness constants
• InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-LayerSuperlattices
• Violet InGaN/GaN/AlGaN-Based Laser Diodes with an Output Power of 420 mW
• Room-Temperature Continuous-Wave Operation of InGaN/GaN Multiquantum Well Laser Diode
• InGaN-based blue light-emitting diodes grown on epitaxially laterally overgrown GaN substrates
• Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth
• InGaN/GaN/AlGaN-Based LEDs and Laser Diodes
• InGaN/GaN/AlGaN-Based LEDs and Laser Diodes
• Spectroscopic Studies in InGaN Quantum Wells
• Symmetry of Electrons and Holes in Lightly Photo-Excited InGaN LEDs
• InGaN/GaN/AlGaN-based laser diodes with an estimated lifetime of longer than 10,000 hours (Reprinted from Materials Research Society Proceedings, vol 482, 1997),
• InGaN multiquantum-well-structure laser diodes with GaN-AlGaN modulation-doped strained-layer superlattices,
• InGaN/GaN/AlGaN-based laser diodes with cleaved facets grown on GaN substrates,
• Luminescence spectra from InGaN multiquantum wells heavily doped with Si,
• InGaN-based violet laser diodes
• Dimensionality of excitons in laser-diode structures composed of In_xGa_1-xN multiple quantum wells
• GaN-based lasers and other devices
• GaN-based light emitting diodes
• Atomic Scale Indium Distribution in a GaN/In0. 43GaN0. 57N/Al0. 1Ga0. 9N Quantum Well Structure
• Current and temperature dependence of electroluminescence of InGaN-based UV/blue/green light-emitting diodes
• Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
• High-quality GaN on AlN multiple intermediate layer with migration enhanced epitaxy by rf-molecular beam epitaxy
• High-quality GaN on AlN multiple intermediate layer with migration enhanced epitaxy by rf-molecular beam epitaxy
• Brillouin scattering study in the GaN epitaxial layer
• Brillouin scattering study of gallium nitride: elastic stiffness constants
• Structural and vibrational propereties of GaN
• Brillouin scattering study of bulk GaN
• High-Brightness InGaNBlue,Green and Yellow Light-Emitting Diodes with Quantum Well Structures
• Regional Density Functional Theory for Parasitic Reaction in III-V Nitride Semiconductor Crystal Growth
• Reduction of Threading Dislocations in RF-MBE Grown Polarity Controlled GaN by AlN Multiple Interlayers
• GaN Epitaxial Growth Using RF Pulsed Laser Deposition (PLD) Method with Molten Ga Target
• Heteroepitaxy and Characterization of GaN with Low Dislocation Density on Periodically Grooved Sapphire Substrate
• Spectroscopic Studies in InGaN Single-Quantum-Well Amber Light-Emitting Diodes
• Nonradiative Recombination Processes in GaN-Based Semiconductors Probed by the Transient Grating Method
• Photoreflectance Spectra of Excitonic Polaritons in Wurtzite GaN
• Correlation between Optical Emission and Disordering of Indium in InxGa1-xN Single Quantum Wells Analyzed by Coaxial Impact Collision Ion Scattering Spectroscopy
• Effect of Impurity Doping on the Mechanical Properties of AlxGa1-xN Ternary Alloys
• High-Efficiency GaN/AlxGa1-xN Multi-Quantum Well Light Emitter Grown on Low-Dislocation Density AlxGa1-xN
• Surface Acoustic Wave Filters at 2.4 GHz Using AlN Deposited on Off-Angle R-Plane Sapphire Substrates by MOCVD
• Violet InGaN/GaN/AlGaN-Based Laser Diodes Operable at 50 Degrees C with a Fundamental Transverse Mode,
• InGaN-based blue light-emitting diodes and laser diodes,

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© 1998 The Materials Research Society