References with laser in the title or abstract

• Stimulated emission and laser action in gallium nitride
• Growth of cubic phase gallium nitride by modified molecular-beam epitaxy Growth of cubic phase gallium nitride
• Disk hydrogen plasma assisted chemical vapor deposition of aluminum nitride
• Single Phase Gallium Nitride on Sapphire with Buffering AlN Layer by Laser Induced CVD
• Growth of GaN Films by Combined Laser and Microwave Plasma Enhanced Chemical Vapor Deposition
• Epitaxial Growth of Cubic AlN Films on (100)silicon and (111)silicon by Pulsed Laser Ablation
• Oriented Growth of GaN Films on Sapphire Surface
• Domain Epitaxial Growth of TiN/Si(001), TiN/GaAs(001), and Si/TiN/Si(001) Heterostructures by Laser Physical Vapor Deposition: Theory and Experiment
• Single Phase Deposition of Alpha Gallium Nitride by a Laser Induced Transport Process
• p-type gallium nitride by reactive ion-beam molecular beam epitaxy with ion implantation, diffusion, or coevaporation of Mg
• Theoretical study of room temperature optical gain in GaN strained quantum wells
• InGaN MQW Structure Laser Diodes with Cleaved Mirror Facets
• Photoassisted dry etching of GaN
• InGaN multi-quantum-well structure laser diodes grown on MgAl₂O₄ substrates
• Carbon-doped boron nitride cold cathodes
• Polycrystalline diamond, boron nitride and carbon nitride thin film cold cathodes
• Resonant Raman scattering in hexagonal GaN
• Cleaved GaN facets by wafer fusion of GaN to InP
• Free excitonic transitions in GaN, grown by metal- organic chemical-vapor deposition
• InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
• Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
• Recent progress of crystal growth, conductivity control and light emitters of column-III nitrides, and future prospect of nitride-based laser diode.
• An optically pumped GaN- AlGaN vertical cavity surface emitting laser
• Optical gain in GaInN/GaN heterostructures
• First Successful III-V Nitride Based Laser Diodes
• Study of chemically assisted ion beam etching of GaN using HCl gas
• The Morphology and Cathodoluminescence of GaN Thin Films
• Ridge-geometry InGaN MQW structure laser diodes
• Silicon-based group IV heterostructures for optoelectronic applications Silicon-based group IV heterostructures
• Characteristics of InGaN multi-quantum-well-structure laser diodes
• Optical gain of InGaP and cubic GaN quantum-well lasers with very strong spin- orbit coupling
• Comparative Raman studies of cubic and hexagonal GaN epitaxial layers
• Optical properties of wurtzite GaN grown by low-pressure metalorganic chemical-vapor deposition
• Room-temperature stimulated emission in GaN/AlGaN separate confinement heterostructures grown by molecular beam epitaxy
• Room-temperature photoenhanced wet etching of GaN
• Optically pumped GaN/Al_0.1Ga_0.9N double- heterostructure ultraviolet laser
• Theory of optical gain in ideal GaN heterostructure lasers
• Valence subband structures of wurtzite GaN/AlGaN quantum wells
• High-quality GaN epitaxial layer grown by metalorganic vapor phase epitaxy on (111) MgAl[sub 2]O₄ substrate
• Electron-phonon interactions in the wide band-gap semiconductor GaN
• Theory of laser gain in group-III nitrides
• Theoretical prediction of GaN lasing and temperature sensitivity
• Nanoscale structures in III-V semiconductors using sidewall masking and high ion density dry etching Nanoscale structures in III-V semiconductors
• Gold nanocomposites Gold nanocomposites
• Above room temperature near ultraviolet lasing from an optically pumped GaN film grown on sapphire
• Surface analysis by photoionization at very high laser intensities Surface analysis by photoionization
• Dynamics of laser sputtering at GaN, GaP, and GaAs surfaces
• Inductively coupled plasma etching of GaN
• Transverse modes and lasing characteristics of selectively grown vertical cavity semiconductor lasers
• Optical patterning of GaN films
• Light scattering in high-dislocation-density GaN
• Realization of optically pumped second-order GaInN-distributed-feedback lasers
• Growth of High-Quality AlN and AlN/GaN/AlN Heterostructure on Sapphire Substrate
• Reduction of Threshold Current Density of Wurtzite GaN/AlGaN Quantum Well Lasers by Uniaxial Strain in (0001) Plane
• ZnSe based materials - current status and problems for the laser diode application-
• Alternative N precursors and Mg doped GaN grown by MOVPE
• Biaxial Strain Effect on Wurtzite GaN/AlGaN Quantum Well Lasers
• MOCVD Equipment for Recent Developments towards the Blue and Green Solid State Laser
• GaN Based p‐n Structures Grown on SiC Substrates
• Cleaved cavity optically pumped InGaN(en-dash) GaN laser grown on spinel substrates
• Growth of c-axis oriented gallium nitride thin films on an amorphous substrate by the liquid-target pulsed laser deposition technique
• Strain Effect on electronic and optical properties of GaN/AlGaN QW Lasers
• Room Temperature CW Operation of InGaN MQW Structure Laser Diodes
• Optical gain in wide bandgap GaN quantum well lasers
• Room Temperature pulsed operation of nitride based MQW laser diodes with cleaved facets on conventional c-face sapphire substrates
• The Blue Laser Diode - GaN based Light Emitters and Lasers
• Laser excited emission of couprous halides
• Optoelectronic and structural properties of high-quality GaN grown by hydride vapor phase epitaxy
• Growth and Properties of InGaN and AlInGaN Thin Films on (0001) Sapphire
• First III-V Nitride Violet Laser Diodes
• Etching processes for fabrication of GaN/InGaN/AlN microdisk laser structures
• Optical gain and carrier lifetime of InGaN multi-quantum well structure laser diodes,
• Continuous-wave operation of InGaN multi-quantum-well-structure laser diodes at 233 K,
• Role of self-formed InGaN quantum dots for exiton localization in the purple laser diode emitting at 420 nm
• CW degradation at 300 K of GaAs double-heterostructure junction lasers. II. Electronic gain,
• Photocurrent spectra and gain spectra of InGaN multi-quantum-well structure laser diodes
• Characteristics Of Room Temperature-CW Operated InGaN Multi-Quantum-Well-Structure Laser Diodes
• Shortest wavelength semiconductor laser diode
• Observation of resonant Raman lines during the photoluminescence of doped GaN
• Nitride-based semiconductors for blue and green light-emitting devices
• Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser dides with lifetimes of 27 hours
• Excitation of a higher order transverse mode in an optically pumped In0.15Ga0.85N/In0.05Ga0.95N multiquantum well laser structure
• Longitudinal mode spectra and ultrashort pulse generation of InGaN multiquantum well structure laser diodes
• High quality optoelectronic grade epitaxial AlN films on alpha-Al₂O₃, Si and 6H-SiC by pulsed laser deposition
• High quality crystalline ZnO buffer layers on sapphire (001) by pulsed laser deposition for III-V nitrides
• Subband emissions from InGaN multi-quantum-well laser diodes under room-temperature continous wave operation
• Optically pumped GaN-AlGaN double-heterostructure lasers grown by ECR-GSMBE and HVPE.
• Pulsed laser deposition of epitaxial AlN, GaN, and InN thin films on sapphire(0001)
• Ultrafast carrier - carrier scattering in wide-gap GaN semiconductor laser devices
• Photoluminescence Characteristics of GaN/InGaN/GaN Quantum Wells
• On the Theory of Optical Gain of Strained-Layer Hexagonal and Cubic GaN Quantum-Well Lasers
• Room-Temperature operation of GaInNAs/GaInP DH Laser Diodes grown by MOCVD
• Theoretical Analysis of the Threshold Current Density in GaN/AlGaN Strained QW Lasers with a Modulation-doped Structure
• Characterization of InGaN MQW structures for blue semiconductor laser diodes
• Theoretical analisis of cubic GaInN/GaN/AlGaN quantum well lasers
• Design of GaN-based surface emitting laser with low threshold operation
• Growth of gallium nitride thin films by liquid-target pulsed laser deposition
• Synthesis of gallium nitride quantum dots through reactive laser ablation
• Full color TV projector based on A²B⁶ electron-beam pumped semiconductor lasers
• Improvement of the characteristics of ZnSe single crystal semiconductor lasers pumped longitudinally by an electron beam
• Ultraviolet ZnS semiconductor laser pumped longitudinally by an electron beam
• Room-temperature laser cathode-ray tube based on an ZnCdSe/ZnSe superlattice
• A Perspective on the GaN Injection Laser
• Carrier capture in pseudomorphically strained wurtzite GaN quantum-well lasers
• Pulsed operation lasing in a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiC
• Optical nonlinearities of Gallium Nitride
• Threshold Estimation of GaN-Based Surface Emitting Lasers Operating in Ultraviolet Spectral Region
• Properties of the Biexciton and the Electron-Hole-Plasma in Highly Excited GaN
• Semiconductor Lasers and Heterojunction LEDs
• Room-temperature continuous-wave operation of InGaN multi-quantum-well-structure laser diodes with a long lifetime
• Laser cathode-ray tube with a ZnO-screen as an ultraviolet source in projection exposure systems
• Laser Cathode-Ray Tubes Using Multilayer Heterostructures
• Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVD
• Morphology and X-Ray Diffraction Peak Widths of Aluminum Nitride Single Crystals Prepared by the Sublimation Method
• Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy
• Blue-Green Light-Emitting Diodes and Violet Laser Diodes
• Time-resolved photoluminescence studies of InGaN/GaN multiple quantum wells
• Electron Beam Pumped MQW InGaN/GaN Laser
• p-doping of GaN by MOVPE
• Uv absorption and luminescence in silicon oxynitride prepared by hydrogen-free SPCVD-process
• Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters
• InGaN Laser Diode Grown on 6H-SiC Substrate Using Low-Pressure Metal Organic Vapor Phase Epitaxy
• Exciton dynamics in thick GaN MOVPE epilayers deposited on sapphire.
• Degradation of blue AlGaN/InGaN/GaN LEDs subjected to high current pulses
• Non-Markovian Memory Effects in GaN Lasers
• Failure of the Modal Gain Model in a GaN Based Laser Diode
• Toward Growing III-V Clusters With Metalorganic Precursors
• Optimization of III-N Based Devices Grown by RF Atomic Nitrogen Plasma Using In Situ Cathodoluminescence
• In_xGa_(1-x)N Alloys as Electronic Materials
• Aluminum Nitride Thin Films Grown by Plasma-Assisted Pulsed Laser Deposition on Si Substrates
• Pulsed Laser Deposition of Gallium Nitride on Sapphire
• Raman Scattering and Photoluminescence of Mg-Doped GaN Films Grown by Molecular-Beam Epitaxy
• Electronic and Optical Properties of Bulk GaN and GaN/AlGaN Quantum-Well Structures
• Processing Challenges for GaN-Based Photonic and Electronic Devices
• Photoelectrochemical Etching of GaN
• Etch Characteristics of GaN Using Inductively-Coupled Cl₂/HBr and Cl₂/Ar Plasmas
• Dry Etching of GaN Using Reactive Ion-Beam Etching and Chemically Assisted Reactive Ion-Beam Etching
• Theory of Gain in Group-III Nitride Lasers
• High-Power, Long-Lifetime InGaN Multi-Quantum-Well-Structure Laser Diodes
• GaInN/GaN Multi-Quantum Well Laser Diodes Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
• Electron Overflow to the AlGaN p-Cladding Layer in InGaN/GaN/AlGaN MQW Laser Diodes
• InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
• Gain spectroscopy of continuous wave InGaN multi-quantum well laser diodes
• Lasing Mechanism of InGaN/GaN/AlGaN multiquantum well laser diode
• Optically Pumped InGaN/GaN Double Heterostructure Lasers with Cleaved Facets
• Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates
• Electronic band structures and optical gain spectra of strained wurtzite GaN-AlxGa1-xN quantum-well lasers
• Electronic band structures and effective-mass parameters of wurtzite GaN and InN
• High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates
• Effect of the (1010) Crystal Orientation on the Optical Gain of Wurtzite GaN/AlGaN Quantum Well Lasers
• Modal Reflection of Quarter-Wave Mirrors in Vertical-Cavity Lasers
• Theory of the Temperature Dependence of the Threshold Current of an InGaAsP Laser
• Experimental Study of Auger Recombination, Gain, and Temperature Sensitivity of 1. 5 μm Compressively Strained Semiconductor Lasers
• Qualitative Evaluation of Gain and Losses in Quaternary Lasers
• Current Spreading and Series Resistance of Proton-Implanted Vertical‐Cavity Top-Surface-Emitting Lasers
• Laser diodes in piezoelectric quantum-well structures
• Luminescent polymers promise novel lasers
• X-ray characterization of GaN/AlGaN multiple quantum wells for ultraviolet laser diodes
• ZnCdSe/ZnSe quantum-well laser-diode on a (711)A GaAs substrate
• Analysis of optical gain and threshold current density of InGaN/GaN/AlGaN quantum well lasers
• The role of piezoelectric fields in GaN-based quantum wells
• RT-CW Operation of InGaN multi-quantum-well structure laser diodes
• Effects of Si-Doping in the Barriers of InGaN Multiquantum Well Purplish-Blue Laser Diodes
• Lateral Electron Current Operation of Vertical Cavity Surface Emitting Lasers with Buried Tunnel Contact Hole Sources
• Modal Reflection of Quarter-Wave Mirrors in Vertical-Cavity Lasers
• Lasing Mechanism of InGaN-GaN-AlGaN MQW Laser Diode Grown on SiC by Low-Pressure Metal-Organic Vapor Phase Epitaxy
• Characteristics of InGaN-AlGaN Multiple-Quantum-Well Laser Diodes
• Threshold evaluation of GaN/AlGaNAlN vertical-cavity surface-emitting lasers
• Threshold currents of nitride vertical-cavity surface-emitting lasers with various active regions
• GaN-Based Materials for Blue Emitting Device Structures Grown in Multiwafer Planetary^® Reactors
• InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-LayerSuperlattices
• Room-Temperature Continuous Wave Operation of InGaN Laser Diodes with Vertical Conducting Structure on SiC Substrate
• Violet InGaN/GaN/AlGaN-Based Laser Diodes with an Output Power of 420 mW
• Uniaxial Strain Effect on the Electronic and Optical Properties of Wurtzite GaN/AlGaN Quantum Well Lasers
• Room-Temperature Continuous-Wave Operation of InGaN/GaN Multiquantum Well Laser Diode
• Room-Temperature Pulsed Operation of GaN-Based Laser Diodes on a-Face Sapphire Substrate Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
• Characteristic of InGaN/GaN Laser Diode Grown by a Multi-Wafer MOCVD System
• Multiwafer MOVPE of III-nitride\films for LED and laser applications
• InGaN/GaN/AlGaN-Based LEDs and Laser Diodes
• InGaN/GaN/AlGaN-Based LEDs and Laser Diodes
• Damage-Free Photoassisted Cryogenic Dry Etching and Photoelectrochemical Wet Etching of GaN
• Focused Ion Beam Micromachining of GaN Photonic Devices
• Characterization of InGaN/GaN-Based Multi-Quantum Well Distributed Feedback Lasers
• Mechanisms of Optical Gain in Cubic GaN and InGaN
• Optical Gain Spectra in GaN/InGaN Quantum Wells with the Compositional Fluctuations
• Characteristic Temperature Estimation for GaN-Based Lasers
• Crystal Structure and Defects in Nitrogen-Deficient GaN
• Theory of the Gain Characteristics of InGaN/AlGaN QD Lasers
• Room Temperature Laser Action in Laterally Overgrown GaN Pyramids on (111) Silicon
• Fabrication of Smooth GaN-Based Laser Facets
• Green emission from Er-doped GaN grown by molecular beam epitaxy on Si substrates
• Photoluminescence from laser assisted debonded epitaxial GaN and ZnO films
• Properties, processing and applications of GaN and related semiconductors
• Red light emission by photoluminescence and electroluminescence from Pr-doped GaN on Si substrates
• InGaN/GaN/AlGaN-based laser diodes with an estimated lifetime of longer than 10,000 hours (Reprinted from Materials Research Society Proceedings, vol 482, 1997),
• InGaN multiquantum-well-structure laser diodes with GaN-AlGaN modulation-doped strained-layer superlattices,
• InGaN/GaN/AlGaN-based laser diodes with cleaved facets grown on GaN substrates,
• Large Free-Standing GaN Substrates by Hydride Phase Epitaxy and Laser-Induced Liftoff.
• Red light emission by photoluminescence and electroluminescence from Eu-doped GaN
• Quantum-well width dependence of threshold current density in InGaN lasers,
• InGaN-based violet laser diodes
• Dimensionality of excitons in laser-diode structures composed of In_xGa_1-xN multiple quantum wells
• Free-carrier screening of polarization fields in wurtzite GaN/InGaN laser structures
• GaN-based lasers and other devices
• The facet formation of GaN-based device using chemically assisted ion beam etching(CAIBE) with photoresist mask
• Room Temperature CW Operation of GaN-Based Blue Laser Diodes by GaInN/GaN Optical Guiding Layers
• Improved Characteristics of InGaN Multi-Quantum-Well Laser Diodes Grown on Laterally Epitaxially Overgrown GaN on Sapphire
• Effect of AlGaN/GaN Strained Layer Superlattice Period on InGaN MQW Laser Diodes
• Growth of Crack-Free Thick AlGaN Layer and its Application to GaN Based Laser Diodes
• Pulsed-Laser-Deposited AlN Films for High-Temperature SiC MIS Devices
• Electron Beam Pumping in Nitride Vertical Cavities With GaN/A10.25Ga0.75 Bragg Reflectors
• Microstructure-based Lasing in GaN/AlGaN Separate Confinement Heterostructures
• Development of Wide Bandgap Semiconductor Photonic Device Structures by Excimer Laser Micromachining
• Optical properties of thin films and quantum wells of InxGa1-xN/GaN and their dependence on laser irradiation
• GaInNAs: a novel material for long-wavelength-range laser diodes with excellent high-temperature performance
• A 1. 3- mu m GaInNAs laser diode with a lifetime of over 1000 hours
• 1. 3 μm continuous-wave operation of GaInNAs lasers grown by metal organic chemical vapour deposition
• 1. 29 μm GaInNAs multiple quantum-well ridge-waveguide laser diodes with improved performance
• GaInAsN/GaAs laser diodes operating at 1. 52 μm
• GaInNAs: a novel material for long-wavelength semiconductor lasers
• A novel GaInNAs-GaAs quantum-well structure for long-wavelength semiconductor lasers
• High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates
• Fabrication of Conductive AlN Films by Pulsed Laser Deposition
• GaN Epitaxial Growth Using RF Pulsed Laser Deposition (PLD) Method with Molten Ga Target
• Morphological Evolution During Growth of InGaN Laser Diodes on Laterally Overgrown GaN on Sapphire
• Epitaxial Growth of AlN on Si(111) by Laser MBE
• Bonding of GaN with Si using Selenium Sulphide (SeS2) and Laser Lift-Off
• The Optical and Electrical Characteristics of CO2 Laser Treated Mg-Doped GaN Film
• GaN-Based High Power Blue-Violet Laser Diodes
• Fabrication of InGaN Multiple-Quantum-Well Laser Diodes on Copper Substrates by Laser Lift-Off
• RT-CW Operation of GaN-Based Laser Diodes Improved by GaN/GaInN Optical Guiding Layers
• Analysis of Lateral Transverse Modes of Ridge-Geometry AlGaInN Laser Diodes
• On the Feasibility of Fundamental-Mode Operation in Unstable-Resonator InGaN Lasers
• Present Status of InGaN-Based Light-Emitting Diodes and Laser Diodes
• Advances in Blue Laser Diode Development for High Resolution Printing
• Enhancement of cathodoluminescent and photoluminescent properties of Eu:Y2O3 luminescent films by vacuum cooling
• Violet InGaN/GaN/AlGaN-Based Laser Diodes Operable at 50 Degrees C with a Fundamental Transverse Mode,
• InGaN-based blue light-emitting diodes and laser diodes,

Search performed Thursday, February 14, 2002 11:08:10 AM.
© 1998 The Materials Research Society