References with etch in the title or abstract

• Electrolytic etching of GaN
• Etching of GaN using phosphoric acid
• Dry and wet etching characteristics of InN, AlN, and GaN deposited by electron cyclotron resonance metalorganic molecular beam epitaxy Dry and wet etching characteristics of InN, AlN, and GaN
• Low bias electron cyclotron resonance plasma etching of GaN, AlN, and InN
• Dry patterning of InGaN and InAlN
• Dry Etching of Thin Film InN, AiN and GaN
• Hydrogen incorporation in GaN, AIN, and InN during Cl2/CH4/H2/Ar ECR plasma etching
• Dry Etching and Implantation Characteristics of Iii-n Alloys
• Chemically Assisted Ion Beam Etching of Gallium Nitride
• Reactive Ion Etching of Gallium Nitride Using Hydrogen Bromide Plasmas
• Characteristics of chemically assisted ion beam etching of gallium nitride
• Reactive ion etching of gallium nitride in silicon tetrachloride plasmas
• Ar⁺-ion milling characteristics of III-V nitrides
• Ecr Plasma Etching of GaN, AlN and Inn Using Iodine or Bromine Chemistries
• SiC-a(3)n Alloys and Wide Band Gap Nitrides Grown on SiC Substrates
• X-Band Thin Film Acoustic Filters on GaAs
• Electron Cyclotron resonance etch characteristics of GaN in SiCl4/Ar
• Electric breakdown in GaN p-n junctions
• Photoassisted dry etching of GaN
• Dry etching of gallium nitride using CCl2F2, CCl4 and air.
• InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
• AlGaN pn junctions
• Reactive ion etching of GaN using BCl₃
• Study of chemically assisted ion beam etching of GaN using HCl gas
• Magnetron reactive ion etching of group III-nitride ternary alloys
• High density plasma etching of III- V nitrides.
• Patterning of AlN, InN, and GaN in KOH-based solutions
• Unintentional hydrogenation of GaN and related alloys during processing Unintentional hydrogenation during processing
• Very low resistance multilayer Ohmic contact to n- GaN
• Room-temperature photoenhanced wet etching of GaN
• Electron cyclotron resonance etching characteristics of GaN in SiCl₄/Ar
• The influence of CH₄/H₂/Ar plasma etching on the conductivity of n-type gallium nitride
• Dry etch damage in InN, InGaN, and InAlN
• High rate electron cyclotron resonance etching of GaN, InN, and AlN High rate electron cyclotron resonance
• Reactive ion etching of GaN using CHF₃/Ar and C₂ClF₅/Ar plasmas
• Nanoscale structures in III-V semiconductors using sidewall masking and high ion density dry etching Nanoscale structures in III-V semiconductors
• High etch rates of GaN with magnetron reactive ion etching in BCl₃ plasmas
• CCl₄ doping of GaN grown by metalorganic molecular beam epitaxy
• High temperature electron cyclotron resonance etching of GaN, InN, and AlN
• Deep implantation of nitrogen into GaAs for selective three-dimensional microstructuring
• Photoemission study of nitrogen-implanted GaAs surfaces
• Inductively coupled plasma etching of GaN
• Optical patterning of GaN films
• Room temperature epitaxy of Pd films on GaN under conventional vacuum conditions
• ICl/Ar electron cyclotron resonance plasma etching of III-V nitrides
• Realization of optically pumped second-order GaInN-distributed-feedback lasers
• Reactive Fast Atom Beam Etching of a Wide-gap Semiconductor GaN
• ECR RIE-Enhanced Low Pressure Plasma Etching of GaN/InGaN/AlGaN Heterostructures
• Fabrication of GaN mesa structures
• The Incorporation of Hydrogen into III-V Nitrides During Processing
• Cl₂/Ar and CH₄/H₂/Ar dry etching of III-V nitrides
• Dry Etching of GaN Using Chemically Assisted Ion Beam Etching with HCl and H2/Cl2
• Reactive Ion Etching of Gallium Nitride Films
• Silver Schottky contacts on Si(111):H-1x1 surfaces prepared bywet-chemical etching
• GaN Layers Grown by HVPE on P-type 6H-SiC Substrates
• Effects of reactive ion etching on the electrical properties of n-GaN surfaces
• Dry Etching of AlxGa1-xN using Chemically Assisted Ion Beam Etching
• Etching processes for fabrication of GaN/InGaN/AlN microdisk laser structures
• Characterization of reactive ion etching-induced damage to n-GaN surfaces using Schottky diodes
• Photoassisted Anodic Etching of Gallium Nitride
• Reactive Ion Etching of Silicon Carbide with Fluorine-Containing Plasmas
• Highly Anisotropic, Ultra-Smooth Patterning of GaN/SiC by Low Energy Electron Enhanced Etching in DC Plasma
• Theoretical Study of the Surface Reaction Mechanism of GaN with HCl
• Dislocation Etch Pits in GaN Epitaxial Layers Grown on Sapphire Substrates
• High-density plasma etching of compound semiconductors
• Plasma etching of III-nitrides in ICl/Ar and IBr/Ar plasmas
• Electron cyclotron resonance etching of III–V nitrides in IBr/Ar plasmas
• High Frequency AlGaN/GaN MODFET's
• New Precursor Routes to Nanocrystalline Cubic/Hexagonal Gallium Nitride, GaN
• Characteristics of Indium-Gallium-Nitride Multiple-Quantum-Well Blue Laser Diodes Grown by MOCVD
• Effects of Dissolved Oxygen on Anodic Etching of n-Type GaN Films Using a Sodium Hydroxide Electrolyte
• Physical Properties of Bulk GaN Crystals Grown by HVPE
• GaN based LED's with different recombination zones
• Effect of Dry Etching on Surface Properties of III-Nitrides
• Thermodynamic Study on Metalorganic Vapor-Phase Epitaxial Growth of Group III Nitrides
• High rate and selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma
• Quasi-Thermodynamic Analysis of Metalorganic Vapor- Phase Epitaxy of GaN
• Polar-Twinned Defects in LiGaO₂ Substrates Lattice Matched With GaN
• A Chemical and Structural Study of the AlN-Si Interface
• Processing Challenges for GaN-Based Photonic and Electronic Devices
• Photoelectrochemical Etching of GaN
• Patterning of GaN in High-Density Cl₂- and BCl₃-Based Plasmas
• Etch Characteristics of GaN Using Inductively-Coupled Cl₂/HBr and Cl₂/Ar Plasmas
• Dry Etching of GaN Using Reactive Ion-Beam Etching and Chemically Assisted Reactive Ion-Beam Etching
• Development of GaN and InGaN Gratings by Dry Etching
• Plasma Damage Effects in InAlN Field-Effect Transistors
• ICP Dry Etching of III-V Nitrides
• Temperature Behavior of Pt/Au Ohmic Contacts to p-GaN
• Low Resistance Contacts to p-Type GaN
• InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
• Reactive ion etching of GaN layers using SF6
• Selective etching of wide bandgap nitrides
• Selective ICP etching of group III-nitrides in Cl₂ andBCl₃-based plasmas
• Etching of InP at >1μm·min⁻¹ inCl₂/Ar plasma chemistries
• Reactive ion etching of III-V semiconductors
• Selective dry etching of III-nitrides in Cl₂/Ar,CH₄/H₂/Ar, ICl/Ar and IBr/Ar
• The dry etching of group III-nitride wide-bandgap semiconductors
• New plasma chemistries for etching GaN and InN: BI₃ and BBr₃
• Morphology of nickel and nickel/gold contacts to gallium nitride
• Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN
• Dopant-selective photoenhanced wet etching of GaN
• Selective Area Growth of GaN Directly on (0001) Sapphire by the HVPE Technique
• Evaluation of nanopipes in MOCVD grown (0001) GaN/Al2O3 by wet chemical etching
• Schottky Diodes on MOCVD Grown AlGaN Films.
• 300°ree;C GaN/AlGaN Heterojunction Bipolar Transistor
• Near Defect Free GaN Substrates
• Etch Processing of III-V Nitrides
• Damage-Free Photoassisted Cryogenic Dry Etching and Photoelectrochemical Wet Etching of GaN
• Characterization of InGaN/GaN-Based Multi-Quantum Well Distributed Feedback Lasers
• Ranges of Deposition Temperatures Applicable for Metalorganic Vapor Phase Epitaxy of GaN Films Via the Technique of Pendeo-Epitaxy
• Pendeo-Epitaxy - A New Approach for Lateral Growth of GaN Structures
• Effects of Surface Preparation on Epitaxial GaN on 6H-SiC Deposited Via MOCVD
• Nitridation of GaAs(001) Surface Studied by Auger Electron Spectroscopy
• Influence of the First Preparation Steps on the Properties of GaN Layers Grown on 6H-SiC by MBE
• Photoelectrochemical Etching of In_xGa_1-xN
• Inductively Coupled Plasma Etching of III-Nitrides in Cl₂/Xe, Cl₂/Ar and Cl₂/He
• Focused Ion Beam Etching of GaN
• Fabrication of Smooth GaN-Based Laser Facets
• Group-III Nitride Etch Selectivity in Boron Trichloride/Chlorine ICP Plasmas
• Patterning III-N Semiconductors by Low Energy Electron Enhanced Etching (LE4)
• Dry and Wet Etching for Group III-Nitrides
• A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C
• Thermal etching of binary and ternary III-V compounds under vacuum conditions
• Properties, processing and applications of GaN and related semiconductors
• Visible-Blind UV Digital Camera Based On a 32 x 32 Array of GaN/AlGaN p-i-n Photodiodes
• Characteristics of Inductively Coupled Cl2/BCl3 Plasmas during GaN Etching
• A study of GaN etch mechanism using the inductively coupled Cl2/Ar plasmas
• The facet formation of GaN-based device using chemically assisted ion beam etching(CAIBE) with photoresist mask
• EFFECTS OF INDUCTIVELY COUPLED PLASMA CONDITIONS ON THE ETCH PROPERTIES OF GaN AND OHMIC CONTACT FORMATIONS
• Etch characteristics of GaN using inductively coupled Cl2/Ar and Cl2/BCl3 plasmas
• EFFECTS OF PLASMA CONDITIONS ON THE ETCH PROPERTIES OF AlGaN
• A TEM Study of GaN Grown by ELO on (0001) 6H-SiC
• Preparation and Characterization of Single-Crystal Aluminum Nitride Substrates
• Surface Conversion Effects in Plasma-Damaged p-GaN
• A Comparative Study of GaN Diodes Grown by MBE on Sapphire and HVPE-GaN/Sapphire Substrates
• Wet Etching of Ion-Implanted GaN Crystals by AZ-400K Photoresist
• A Damage-Reduced Process Revealed by Photoluminescence in Photoelectrochemical Etching GaN
• Highly Chemical Reactive Ion Etching of Gallium Nitride
• Focused Ion Beam Etching of Nanometer-Size GaN/AlGaN Device Structures and Their Optical Characterization by Micro-Photoluminescence/Raman Mapping
• UV-Specific (320-365 nm) Digital Camera Based On a 128x128 Focal Plane Array of GaN/AlGaN p-i-n Photodiodes
• Solar-Blind AlGaN Heterostructure Photodiodes
• Origin of hexagonal-shaped etch pits formed in (0001) GaN films
• Inductively coupled plasma etching of GaN using BCl3/Cl2 chemistry and photoluminescence studies of the etched samples
• ICP Etching of GaN,
• Low Energy Electron Enhanced Etching of Semiconductors,
• Improved Sidewall Morphology on Dry Etched, SiO₂ Masked GaN Features,
• Plasma Etch Induced Conduction Changes in GaN,
• A Review of Dry Etching of GaN and Related Materials
• The Effects of Reactive Ion Etching-Induced Damage on the Characteristics of Ohmic Contacts to n-Type GaN
• Gallium Nitride whiskers formed by selective photoenhanced wet etching of dislocations
• Dislocation Density of GaN Grown by Hydride Vapor Phase Epitaxy
• ICP Etching for the Fabrication of AlGaInN VCSELs with Dielectric Mirrors
• Evaluation of Dislocation Densities in n-GaN Films by Photoassisted Anodic Etching
• Photoassisted Anodic Etching of n-InN Films in an AGW Electrolyte
• Tree-like Features Formed on Photoelectrochemically Etched n-GaN Surfaces: Revelation of Threading Dislocations in GaN
• In-Situ Dry Etch Monitoring for GaN/AlGaN Based Device Structures
• A New KOH-Based UV Assisted Wet Etching Technique and its Application to AlGaN/GaN HFET Fabrication and Characterization
• Preparation of Atomically Flat Surfaces of Silicon Carbide Using Hydrogen Etching

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© 1998 The Materials Research Society